We grew an InGaN/GaN-based light-emitting diode (LED) wafer by metal–organic chemical vapor deposition (MOCVD), fabricated devices by optical lithography, and successfully deposited ellipsoidal Ag nano-particles by way of e-beam lithography on top. The diodes exhibited good device performance, in which we expected an enhancement of the radiated intensity by the simulations and emission measurem...

SU-8 has been widely used in a variety of applications for creating structures in micro-scale as well as sub-micron scales for more than 15 years. One of the most common structures made of SU-8 is tall (up to millimeters) high-aspect-ratio (up to 100:1) 3D microstructure, which is far better than that made of any other photoresists. There has been a great deal of efforts in developing innovativ...

The authors study plasmonic enhancements of photoluminescence (PL) in Si nanodisk (ND) arrays hybridized with nanostructures such as nanoplates of Au, where these hybrid nanostructures are fabricated by fully top-down lithography: neutral-beam etching using bio-nano-templates and high-resolution electron-beam lithography. The separation distance between the Si ND and Au nanostructure surfaces i...

A proof of concept study of the feasibility of fully three-dimensional (3D) time-dependent simulation of nano-imprint lithography of polymer melt, where the polymer is treated as a structured liquid, has been presented. Considering the flow physics of the polymer as a structured liquid, we have followed the line initiated by de Gennes, using a Molecular Stress Function model of the Doi and Edwa...

Nanoscale science and technology has today mainly focused on the fabrication of nano devices. In this paper, we study the use of lithography process to build the desired nanostructures directly. Nanolithography on polymethylmethacrylate (PMMA) surface is carried out by using Atomic Force Microscope (AFM) equipped with silicon tip, in contact mode. The analysis of the results shows that the ...

We present a method for submicron fabrication of flexible, thin-film structures fully encapsulated in biocompatible polymer poly (chloro-p-xylylene) (Parylene C) that improves feature size and resolution by an order of magnitude compared with prior work. We achieved critical dimensions as small as 250 nm by adapting electron beam lithography for use on vapor deposited Parylene-coated substrates...

Artifact metrics is an information security technology that uses the intrinsic characteristics of a physical object for authentication and clone resistance. Here, we demonstrate nano-artifact metrics based on silicon nanostructures formed via an array of resist pillars that randomly collapse when exposed to electron-beam lithography. The proposed technique uses conventional and scalable lithogr...

While the critical dimension in the microelectronics industry is continually going down due to developments in photolithography, it is coming at the expense of exponential increase in lithography tool costs and rising photomask costs. Step and Flash Imprint Lithography (S-FIL) is a nano-patterning technique that results in significantly lower cost of the lithography tool and process consumables...