VLSI technology is constantly evolving towards smaller line widths. In this paper analytical modeling for triple material double gate (TMDG) MOSFETs has been presented in the field of VLSI technology. An entire circuit is manufactured in a single piece of silicon. The level of integration of silicon technology as measured in terms of number of devices per IC. This leads to the concept of scalin...

© 2012 ETRI Journal, Volume 34, Number 1, February 2012 Power metal-oxide semiconductor field-effect transistor (MOSFET) devices are widely used in power electronics applications, such as brushless direct current motors and power modules. For a conventional power MOSFET device such as trench double-diffused MOSFET (TDMOS), there is a tradeoff relationship between specific on-state resistance an...

Low-power, compact, and highperformance NP dynamic CMOS circuits are presented in this paper assuming a 16 nm carbon nano tube transistor technology. The performances of two-stage pipeline 32-bit carry lookahead adders are evaluated based on HSPICE simulation with the following four different implementations: silicon MOSFET (Si-MOSFET) domino logic, Si-MOSFET NP dynamic CMOS, carbon nanotube MO...

INSIDE Drift-Diffusion Mode-Space Approach to Subband Transport in Devices with Transverse Quantum Confinement ......................................... 3 Monte Carlo Device Modeling of a Self-Aligned n-MOSFET ........................................................... 8 MixedMode Netlist Generation Using Gateway ..... 11 Hints, Tips and Solutions ......................................... 14 Or...

A design methodology for the edge termination is proposed to achieve the same breakdown voltage of the non-uniform super-junction (SJ) trench metal-oxide semiconductor field-effect transistor (TMOSFET) cell structure. A simple analytical solution for the effect of charge imbalance on the termination region is suggested, and it is satisfied with the simulation of potential distribution. The dopi...

This paper discusses the type of capacitances for Single Gate MOSFET and Double Gate MOSFET including their quantity. The effect of parasitic capacitance makes double gate MOSFET more suitable component for the designing of digital logic switches than single gate MOSFET. Here, we introducing Independent double gate MOSFET operation based on VeSFET concept. Then introducing with the total capaci...

During the traditional channel noise modeling of nanoscale MOSFETs, neither suppression shot by Fermi and Coulomb effects nor cross correlation between source current gate is considered. However, they should not be ignored. In this study, a 22 nm MOSFET tested experimentally, results show that suppressed noise, thermal are main types noises in nano-MOSFETs. Furthermore, according to physical st...