Articles you may be interested in Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition Appl. n-Si /i-p-i SiGe /n-Si structure for SiGe microwave power heterojunction bipolar transistor grown by ultra-high-vacuum chemical molecular epitaxy Study of thin film deposition processes employing variable kinetic energy...

We present the first quantitative experimental evidence for the underscreened Kondo effect, an incomplete compensation of a quantized magnetic moment by conduction electrons, as originally proposed by Nozières and Blandin. The device consists of an even charge spin S=1 molecular quantum dot, obtained by electromigration of C60 molecules into gold nanogaps and operated in a dilution fridge. The ...

Nanotechnology is ushering in the era of self-replicating machinery and self-assembling consumer goods made from raw atoms. Utilizing the well understood properties of atoms & molecules, nanotechnology proposes the construction of novel molecular devices possessing extraordinary properties. The single electron transistor or SET is a new type of switching device that uses controlled electron tun...

Jacob E. Grose, Burak Ulgut, Abhay N. Pasupathy, Héctor D. Abruña, and Daniel C. Ralph Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY,14853, and Department of Chemistry and Chemical Biology, Cornell University, Ithaca, NY, 14853 *Corresponding Author. E-mail: [email protected] †Laboratory of Atomic and Solid State Physics ‡Department of Chemistry and Chemical Biolo...

We demonstrate a robust graphene-molecule-graphene transistor architecture. We observe remarkably reproducible single electron charging, which we attribute to insensitivity of the molecular junction to the atomic configuration of the graphene electrodes. The stability of the graphene electrodes allow for high-bias transport spectroscopy and the observation of multiple redox states at room-tempe...

a complete procedure for the design of w-band low noise amplifier in mmic technology is presented. the design is based on a simultaneously power and noise matched technique. for implementing the method, scalable bilateral transistor model parameters should be first extracted. the model is also used for transmission line utilized in the amplifier circuit. in the presented method, input/output ma...

In this paper review study on different types of Junctionless transistor is promoted. Here a comparative study of SOI, bulk planar, double gate and tunnel Junctionless field effect transistor. It is observed Junctionless transistor exhibits better short channel effects and ON current then inversion mode device. Tunnel Junctionless transistor exhibits the properties of both tunnel FET and Juncti...

Design and fabrication of electronic biosensors based on field-effect-transistor (FET) devices require understanding of interactions between semiconductor surfaces and organic biomolecules. From this perspective, we review practical considerations for electronic biosensors with emphasis on molecular passivation effects on FET device characteristics upon immobilization of organic molecules and a...

Single-electron transistors SETs are often discussed as elements. A single-electron transistor consists of a small conducting island coupled to source and.Single-electron transistor SET is a key element in our research field where. Figure 2: Transfer of electrons is a one-by-one in Single Electron Transistor.Nanoelectronics Single-electron transistor Coulomb blockade, Coulomb. Single Electron T...