Abstract. The mathematical model for semiconductor devices in three space dimensions are numerically discretized. The system consists of three quasi-linear partial differential equations about three physical variables: the electrostatic potential, the electron concentration and the hole concentration. We use standard mixed finite element method to approximate the elliptic electrostatic potentia...

We present a new mixed finite element method for solving the extended Fisher-Kolmogorov (EFK) equation. We first decompose the EFK equation as the two second-order equations, then deal with a second-order equation employing finite element method, and handle the other second-order equation using a new mixed finite element method. In the new mixed finite element method, the gradient ∇u belongs to...

Displacement finite element models of various beam theories have been developed traditionally using conventional finite element basis functions (i.e., cubic Hermite, equi-spaced Lagrange interpolation functions, or spectral/hp Legendre functions). Various finite element models of beams differ from each other in the choice of the interpolation functions used for the transverse deflection w, tota...

In this paper, an H1-Galerkin mixed finite element method is proposed and analyzed for parabolic partial differential equations with nonselfadjoint elliptic parts. Compared to the standard H1-Galerkin procedure, C1-continuity for the approximating finite dimensional subspaces can be relaxed for the proposed method. Moreover, it is shown that the finite element approximations have the same rates...

In this paper we propose a method for improving the convergence rate of the mixed finite element approximations for the Stokes eigenvalue problem. It is based on a postprocessing strategy that consists of solving an additional Stokes source problem on an augmented mixed finite element space which can be constructed either by refining the mesh or by using the same mesh but increasing the order o...