The aim of this paper is to consider optical and electrical properties of MOVPE GaN homostruture LEDs. The sample that has been selected for the study, doped with Si and Mg for n and p region of junction, respectively. The V-I and L-I characteristics of this device indicate that diffusion and space charge currents have the main role in luminescence, because in this current range defects levels ...

We make a comparative study of the luminescent properties of InGaP films grown on GaAs substrates by two different growth techniques: liquid phase epitaxy (LPE) and metal-organic vapor phase epitaxy (MOVPE). The grown InxGa1KxP (xz0.5) films were nearly lattice matched to GaAs and had the same thickness of approximately 0.5 mm. Photoluminescence (PL) measurements were performed in a wide temper...

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High volume manufacturing of devices based on transition metal dichalcogenide (TMD) ultra-thin films will require deposition techniques that are capable of reproducible wafer-scale growth with monolayer control. To date, TMD growth efforts have largely relied upon sublimation and transport of solid precursors with minimal control over vapor phase flux and gas-phase chemistry, which are critical...

A new molecular conjugation method has been developed to label biomolecules with optically stable metalorganic luminophores, such as tris(2,2'-bipyridyl)dichlororuthenium(II) hexahydrate (Rubpy), which are otherwise not possible for direct linking with the biomolecules. Unique biochemical properties of the biomolecule can, thus, be associated with photostable luminophores. This opens a general ...

The CeO(2)/La(2)Zr(2)O(7)/Ni piled-up structure is a very promising architecture for YBa(2)Cu(3)O(7) (YBCO) coated conductors. We have grown YBCO/CeO(2)/LZO/Ni epitaxial structures by metalorganic decomposition (MOD) and metalorganic chemical vapor deposition (MOCVD) methods. The crystallographic quality of the CeO(2) layer is not well determined by conventional X-ray diffraction (XRD) due to t...