Here we report that ternary metal oxides of type (Me)2O3 with the primary metal (Me) constituent being Fe (66 atomic (at.) %) along with the two Lanthanide elements Tb (10 at.%) and Dy (24 at.%) can show excellent semiconducting transport properties. Thin films prepared by pulsed laser deposition at room temperature followed by ambient oxidation showed very high electronic conductivity (>5 × 10...

Related Articles The influence of gate dielectrics on a high-mobility n-type conjugated polymer in organic thin-film transistors APL: Org. Electron. Photonics 5, 21 (2012) Graphene-protein bioelectronic devices with wavelength-dependent photoresponse Appl. Phys. Lett. 100, 033110 (2012) Model of random telegraph noise in gate-induced drain leakage current of high-k gate dielectric metal-oxidese...

Carbon nanotubes (CNTs) have large intrinsic carrier mobility due to weak acoustic phonon scattering. However, unlike two-dimensional metal-oxide-semiconductor field effect transistors (MOSFETs), substrate surface polar phonon (SPP) scattering has a dramatic effect on the CNTFET mobility, due to the reduced vertical dimensions of the latter. We find that for the van der Waals distance between C...

Although dual-mobility sockets have been in clinical use for decades in other parts of the world, they recently gained popularity in the United States as an option for primary and revision total hip arthroplasty (THA). Improvements in dual-mobility socket technology include articulation with a metal insert impacted into a metal shell and a femoral head made of highly cross-linked polyethylene. ...

High mobility channel thin-film-transistor (TFT) is crucial for both display and future generation integrated circuit. We report a new metal-oxide TFT that has an ultra-thin 4.5 nm SnO2 thickness for both active channel and source-drain regions, very high 147 cm(2)/Vs field-effect mobility, high ION/IOFF of 2.3 × 10(7), small 110 mV/dec sub-threshold slope, and a low VD of 2.5 V for low power o...

Although a great deal of progress has been made for metal-oxide-semiconductor fieldeffect transistors (MOSFETs) with high-k gate dielectrics, it has been experimentally observed that the effective mobility strongly degrades (1-3). The mechanism of the mobility degradation is not clearly understood so far. In order to explain the mobility degradation mechanism, there are several models proposed ...

Microorganisms are intimately involved in metal biogeochemistry with a variety of processes determining mobility, and therefore, bioavailability. The balance between mobilization and immobilization varies depending on the organisms involved, their environment and physicochemical conditions. Metal mobilization can arise from a variety of leaching mechanisms, complexation by metabolites and sider...

A significant role of zinc-binding motifs on metal mobility in Escherichia coli was explored using a chimeric metal-binding green fluorescent protein (GFP) as an intracellular zinc indicator. Investigation was initiated by co-transformation and co-expression of two chimeric genes encoding the chimeric GFP carrying hexahistidine (His6GFP) and the zinc-binding motif fused to outer membrane protei...

Divalent metal ions, such as Zn(2+), Co(2+), and Ni(2+), are capable of incorporating into DNA under certain conditions to form complexes termed M-DNA. To better understand the effects of these cations on DNA we used capillary electrophoresis (CE). The presence of these metal ions in a typical genotyping buffer led to broad peaks with low fluorescence intensities. In addition, some of the metal...

the chemical speciation of heavy metals (arsenic, chromium, copper, lead, zinc and tin) in the sediments offormer tin mining catchment bestari jaya, peninsular malaysia was determined by using the latest version of the community bureau of reference, usually called the bcr 3-step sequential extraction procedure. furthermore, a fourth step was introduced for digestion and analysis of the residue....