نتایج جستجو برای: mems switches

تعداد نتایج: 26359  

2014
Ferran Martín Jordi Bonache

In this review paper, several strategies for the implementation of reconfigurable split ring resonators (SRRs) based on RF-MEMS switches are presented. Essentially three types of RF-MEMS combined with split rings are considered: (i) bridge-type RF-MEMS on top of complementary split ring resonators CSRRs; (ii) cantilever-type RF-MEMS on top of SRRs; and (iii) cantilever-type RF-MEMS integrated w...

2002
Peter De Dobbelaere Ken Falta Li Fan Steffen Gloeckner Susant Patra

Over the last few years an amazing amount of interest has emerged for applications of micro electro-mechanical systems (MEMS) in telecommunications. Silicon-based optical MEMS have proven to be the technology of choice for lowcost scalable photonic applications because they allow mass manufacturing of highly accurate miniaturized parts, and use materials with excellent mechanical and electrical...

1999
N. Scott Barker Gabriel M. Rebeiz

Wide-band switches and true-time delay (TTD) phase shifters have been developed using distributed microelectromechanical system (MEMS) transmission lines for applications in phased-array and communication systems. The design consists of a coplanar waveguide (CPW) transmission line (W = G = 100 m) fabricated on a 500m quartz substrate with fixed–fixed beam MEMS bridge capacitors placed periodica...

2006
Clark T.-C. Nguyen

Micromechanical (or “μmechanical”) components for communication applications fabricated via IC-compatible MEMS technologies and capable of low-loss filtering, mixing, switching, and frequency generation, are described with the intent to not only miniaturize and lower the parts counts of wireless front-ends via higher levels of integration, but also to eventually raise robustness (against interf...

Journal: :Journal of Lightwave Technology 2016

Journal: :International Journal of Microwave and Wireless Technologies 2012

2013
Sarvjeet Kaur Vijay Kumar Anand Dinesh Kumar

In this paper, RF MEMS Capacitive Switches for two different dielectrics hafnium oxide (HfO2) and silicon nitride (Si3N4) are presented. The switches have been characterized and compared in terms of RF performance. The major impact of the change from Si3N4 to HfO2 having dielectric constant 20 is the reduction in overall dimension of the switch; capacitive area is reduced by 66% leading to over...

Journal: :Turkish Journal of Computer and Mathematics Education (TURCOMAT) 2021

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