The high electron mobility spin transistor comprises a 1D or 2D electron gas, obtained from III-V semiconductor heterostructure, with ferromagnetic source and drain contacts. The latter act respectively as a polarizer and as an analyzer for the spin of the electrons, and the gate potential is used to control the spin precession in the channel. After reviewing the main spin dephasing effects exi...

In recent years, giant magnetoresistance (GMR) sensors have shown a great potential as sensing elements for biomolecule detection. The resistance of a GMR sensor changes with the magnetic field applied to the sensor, so that a magnetically labeled biomolecule can induce a signal. Compared with the traditional optical detection that is widely used in biomedicine, GMR sensors are more sensitive, ...

We demonstrate a three-terminal spin wave-based device utilizing spin wave interference. The device consists of three coplanar transmission lines inductively coupled to the 100nm thick CoFe film. Two spin wave signals are excited by microwave fields produced by electric current in two sets of lines, and the output signal is detected by the third set. The initial phases of the spin wave signals ...