During the past two decades, there have been tremendous developments in near-field imaging and local probing techniques. Examples are the Scanning Tunneling Microscope (STM), Atomic Force Microscope (AFM), Near-field Scanning Optical Microscope (NSOM), Photon Scanning Tunneling Microscope (PSTM), and Scanning Thermal Microscope (SThM).Results showed that the average reflectance for a dopant con...

Diamond-like carbon (DLC) thin films used in this study were prepared with DC magnetron sputtering deposition. Silicon (100) wafers were used as the substrates onto which an RF bias was applied during the film deposition. For the nitrogen doped DLC films, a pure graphite target was used as the carbon source and nitrogen gas was introduced into the deposition chamber via a mass flow controller. ...

We show that single-electron transport through a single dopant can be achieved even in a random background of many dopants without any precise placement of individual dopants. First, we observe potential maps of a phosphorus-doped channel by low-temperature Kelvin probe force microscopy, and demonstrate potential changes due to single-electron trapping in single dopants. We then show that only ...

Using a recursive scattering matrix variant, we examine the effects of discrete dopants on the threshold voltage of ultrasmall fully depleted SOI MOSFETs. We find that more highly doped channels produce more interference than do more lightly doped channels. This causes larger fluctuations in threshold voltage. Further, we find that the location of the channel dopants is quite important in the d...

Abstract Contact resistivity reduction at the source/drain contacts is one of main requirements for fabrication future MOS devices. Current research focuses on methods to increase active doping concentration near contact region in silicon-germanium S/D epilayers. A possible approach consists adding co-dopants during epitaxy process. In case p-MOS, gallium can be used addition boron. this work, ...

Behavior of ρab(T ) and RH(T ) is presented for LSCO and YBCO single crystals in the lightly hole-doped antiferromagnetic region, with an emphasis on the RH(T ) data. In both systems, RH is virtually constant at moderate temperatures and tends to increase at low temperatures. Since essentially the same behavior of ρab(T ) and RH(T ) is observed in both LSCO and YBCO, we discuss that the in-plan...

Here, the effect of lightly Niobium doped TiO2 layer on the performance of perovskite solar cells has been studied by using solar cell capacitance simulator (SCAPS). N addition, the effects of Niobium concentration, buffer film thickness and operating temperature on the performance of the perovskite solar cell are investigated. For doping level of 3.0 mol% into the TiO2 layer, cell efficiency o...

An advanced, multi-dimensional, and massively parallel simulation approach based on quantum mechanical concepts is introduced and its numerical algorithms briefly summarized. It has been implemented in a computer aided design tool called OMEN, specifically dedicated to next generation nanoelectronic devices. OMEN can treat electron, hole, and phonon (thermal) transport in realistically sized ul...