A concise arrafytical expression for switch-induced error voltage on a switched capacitor is derived from the distributed MQSFET model. The result, however, can be interpreted in terms of a simple lumped equivalent circuit. With this expression we explore the dependence of the error voltage on process, switch turnoff rate, source resistance, and other circuit parameters. These results can be us...

In this paper we improve the layered implementation of arbitrary stabilizer circuits introduced by Aaronson and Gottesman in Phys. Rev. A 70(052328), 2004: to implement a general stabilizer circuit, we reduce their 11-stage computation -HC-P-C-P-C-H-P-C-P-Cover the gate set consisting of Hadamard, Controlled-NOT, and Phase gates, into a 7-stage computation of the form -C-CZ-P-H-P-CZ-C-. We show...

We obtain a Sturm-Lioville matrix equation of motion (SLME) for the study of electromagnetic wave propagation in layered anisotropic structures. Conducting media were taken into account so that ohmic loss is considered. This equation can be treated using a 4 × 4 associated transfer matrix (T) in layered anisotropic structures, where the tensors: permittivity, permeability and the electric condu...

This work describes the improved uniformity of short gate length (sub100nm) T-gate lithography observed for InP HEMT devices through the development of a nonannealed ohmic contact process. The incorporation of such a process allows the reversal of ohmic and gate levels as part of a standard device process flow. This eliminates fluctuations in the gate geometry that result from the spinning of g...

Continued research into the development of III–V high-electron mobility transistors (HEMTs), specifically the minimization of the device gate length, has yielded the fastest performance reported for any three terminal devices to date. In addition, more recent research has begun to focus on reducing the parasitic device elements such as access resistance and gate fringing capacitance, which beco...

Two-dimensional layered materials, such as transition metal dichalcogenides (TMDCs), are promising materials for future electronics owing to their unique electronic properties. With the presence of a band gap, atomically thin gate defined quantum dots (QDs) can be achieved on TMDCs. Herein, standard semiconductor fabrication techniques are used to demonstrate quantum confined structures on WSe2...

Negative compressibility in graphene-terminated black phosphorus heterostructures. Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Negative compressibility is a ma...

In this paper, we propose a synthesizable LDPC decoder IP core for the WiMAX system with high parallelism and enhanced errorcorrecting performance. By taking the advantages of both layered scheduling and fully-parallel architecture, the decoder can fully support multimode decoding specified in WiMAX with the parallelism much higher than commonly used partial-parallel layered LDPC decoder archit...

In this paper, we report the optoelectronic properties of multi-layered GeS nanosheet (∼28 nm thick)-based field-effect transistors (called GeS-FETs). The multi-layered GeS-FETs exhibit remarkably high photoresponsivity of Rλ ∼ 206 A W(-1) under 1.5 μW cm(-2) illumination at λ = 633 nm, Vg = 0 V, and Vds = 10 V. The obtained Rλ ∼ 206 A W(-1) is excellent as compared with a GeS nanoribbon-based ...