We report on the large area realization of GaN photonic crystal slabs with semipolar InGaN quantum wells (QWs) using laser interference lithography and selective area metalorganic vapour phase epitaxy (MOVPE). Directional extraction of guided modes was observed in angle-resolved photoluminescence spectroscopy (ARPL), and the photonic crystal slab dispersion relation was measured. A comparison o...

We report a method for manipulating feature sizes in Si-based grating structures by thermal oxidation, which allows the realization of fin width/period ratios not directly accessible by laser interference lithography. Taking advantage of the expansion in volume associated with the thermal oxidation of Si, grating structures with very high fin width/period ratios of the order of 0.96 were obtain...

A novel cell-based biosensing platform is developed using a combination of sequential laser interference lithography and electrochemical deposition methods. This enables the sensitive discrimination of dopaminergic cells from other types of neural cells in a completely nondestructive manner. This platform and detection strategy may become an effective noninvasive in situ monitoring tool that ca...

A large-scale homogeneous nanocup-electrode array (LHONA) capable of noninvasive real-time monitoring of dopamine generation from human neural-stem-cell-derived midbrain neurons is described by J.-W. Choi, K.-B. Lee, and co-workers on page 6356. LHONA, fabricated through sequential laser interference lithography (LIL), is a conductive cell-culture platform that is extremely important for electr...

We applied the laser interference lithography method to form a patterned sapphire substrate (PSS). A three-dimensional photonic crystal was formed by autocloning the PSS with alternate Ta2O5/SiO2 coatings. A high total integrated reflectance (TIR) band was obtained around the 410 to 470 nm wavelength range that matched the emission spectrum of the gallium nitride (GaN) light-emitting diode (LED...

We present patterning of GaN layers by laser interference lithography to create threedimensional structures on a submicrometer scale. These structures exhibit surfaces comprised of semipolar crystal facets with reduced piezoelectric fields. The small dimensions of these 3D structures allow embedding. The resulting planarized surfaces considerably ease subsequent device processing. Structural ch...

Monolithically integrated four-channel distributed feedback (DFB) laser array has been fabricated by metal organic vapor phase epitaxy (MOVPE) selective area growth for 1.55μm coarsewavelength division multiplexing (CWDM) systems. Wide-stripe MOVPE selective area growth and electron-beam lithography are used to obtain wide CWDM channel spacing of 20 nm. Optical outputs from the simultaneously b...

Ordered and free-standing metallic nanowires were fabricated by e-beam deposition on patterned polymer templates made by interference lithography. The dimensions of the nanowires can be controlled through adjustment of deposition conditions and polymer templates. Grain size, polarized optical transmission and electrical resistivity were measured with ordered and free-standing nanowires.