نتایج جستجو برای: large scale integration

تعداد نتایج: 1584820  

1997
Lars Hellberg Ahmed Hemani Jouni Isoaho Axel Jantsch Mehran Mokhtari Hannu Tenhunen

This paper describes the restructuring of VLSI education at Royal Institute of Technology (KTH). Changing needs of industry, advances in technology and design methodology has required a significant reorganization of VLSI education with combined emphasis on system issues and associated physical constraints. We present here a course structure which will address in parallel fashion the key design ...

2004
Yongseok Cheon Aloysius K. Mok Martin D. F. Wong Donald S. Fussell Mohamed G. Gouda David Z. Pan Don Fussell Mohamed Gouda Gloria Ramirez Seokjin Lee Chan-Gun Lee Honguk Woo Dongyoung Lee Eunhee Jang

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Journal: :Chemie Ingenieur Technik 2006

Journal: :IEICE Transactions 2008
Hidenori Ohta Toshinori Yamada Chikaaki Kodama Kunihiro Fujiyoshi

A 3D-dissection (A rectangular solid dissection) is a dissection of a rectangular solid into smaller rectangular solids by planes. In this paper, we propose an O-sequence, a string of representing any 3Ddissection which is dissected by only non-crossing rectangular planes. We also present a necessary and sufficient condition for a given string to be an O-sequence. key words: rectangular solid d...

2011
Jacob A. Abraham Muhammad Mudassar Nisar Emil Gizdarski Ananta K. Majhi Donghwi Lee Erik Chmelar Edward J. McCluskey Rajesh Tiwari Abhijeet Shrivastava Mahit Warhadpande Srivaths Ravi Zhaoliang Pan Melvin A. Breuer Srikanth Venkataraman Sunghoon Chun Taejin Kim Yongjoon Kim Sungho Kang Sreejit Chakravarty Narendra Devta-Prasanna Sudhakar M Reddy Irith Pomeranz James W. Tschanz Gurgen Harutunyan Valery Vardanian Niladri Narayan Mojumder Saibal Mukhopadhyay Jae-Joon Kim Ching-Te Chuang

2000
Xing Zhou Khee Yong Lim

This paper presents a novel approach to formulating compact I−V models for deep-submicron MOS technology development. The developed model is a one-region closedform equation that resembles the same form as the longchannel one, which covers full range of channel length and bias conditions. Model parameter extraction follows a oneiteration prioritized sequence with minimum measurement data, and c...

1998
Seiichiro Yamaguchi Hiroshi Goto

| Inverse modeling is a promising approach to know device structures made in experiments. We show our inverse modeling approach and its e ciency by demonstrating accurate extraction of deep submicron MOSFET structures. We also show that our approach can predict device performance to optimize its structure for required speci cation.

Journal: :IEEE Trans. on CAD of Integrated Circuits and Systems 1988
Erich Barke

A comparison is made between various approximations of the line-to-ground capacitance problem in a VLSI environment. It is shown that with up-to-date dimensions, the simple parallel-plate model is no longer adequate. However, easy-to-use and fast-to-compute formulas exist that result in accurate and reliable capacitance values. The parasitic capacitance problem is three-dimensional by nature. T...

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