For every genus g, we construct a smooth, complete, rational polarized algebraic variety DMg together with a normal crossing divisor D = ⋃ Di, such that for every moduli space MΣ(2, 0) of semistable topologically trivial vector bundles of rank 2 on an algebraic curve Σ of genus g there exists a holomorphic isomorphism f : MΣ(2, 0) \ K2 → DMg \ D, where K2 is the Kummer variety of the Jacobian o...

A double-lateral-gate p-type junctionless transistor is fabricated on a low-doped (10(15)) silicon-on-insulator wafer by a lithography technique based on scanning probe microscopy and two steps of wet chemical etching. The experimental transfer characteristics are obtained and compared with the numerical characteristics of the device. The simulation results are used to investigate the pinch-off...

Dry molten globular (DMG) intermediates, an expanded form of the native protein with a dry core, have been observed during denaturant-induced unfolding of many proteins. These observations are counterintuitive because traditional models of chemical denaturation rely on changes in solvent-accessible surface area, and there is no notable change in solvent-accessible surface area during the format...

Abstract Field‐effect transistors have strong applications in biosensing field from pH and glucose monitoring to genomics, proteomics, cell signaling assays, biomedical diagnostics general. Notable advantages are the high sensitivity (thanks intrinsic amplification), quick response (useful for real‐time monitoring), suitability miniaturization, compact portable read‐out systems. The initial con...

The choice of gate metal technology for junctionless transistors needs to have diverse characteristics as metals distinct work functions and hence, they show incompatibility while tailoring threshold the device. In such a scenario, bimetallic stacked can be promising candidate present wide range tunable required nano-regime transistors. This paper explores electronic phenomena occurring at meta...

The paper presents a simulation study of the electrical characteristic of Bulk Planar Junctionless Transistor (BPJLT) using spacer. The BPJLT is a transistor without any PN junctions in the vertical direction. It is a gate controlled variable resistor. The characteristics of BPJLT are analyzed by varying the oxide material under the gate. It can be shown from the simulation that an ideal subthr...