self-determination theory (sdt) states that satisfaction of basic psychological needs, including the need for autonomy, competence and relatedness will lead to intrinsic motivation. this study examines the relationship between basic psychological needs and intrinsic motivation of iranian female students in mathematics. for this purpose, 382 students of five school responded to the scale of intr...

 Due to the small roughness in the surface of the crystal sample, it is hard to use photolithography in the patterning process of the Bi2Sr2CaCu2O8+δ intrinsic Josephson junction. In this paper, we report a simple technique for fabricating the Bi2Sr2CaCu2O8+δ intrinsic Josephson junctions. In the patterning process metal masks are used instead of photolithography and argon ion milling is appli...

Resonances are intrinsic characteristics of an elastic object, which are completely independent of the source of excitation. The appropriate utilization of the information contained within the resonance spectra and the identification of the resonance frequencies of the object can be used as a potent tool for material characterization. In this paper, a new mathematical model for the wave diffrac...

Superplastic materials show a very high ductility. This is due to both peculiar process conditions and material intrinsic characteristics. However, a number of superplastic materials are subjected to cavitation during superplastic deformation. Evidently, extensive cavitation imposes significant limitations on their commercial application. The deformation and failure of superplastic sheet metals...

CdSe nanostructures were synthesized by using green chemical route as starch was used as capping agent. XRD, HR-TEM, SEAD, UV and PL studies were made for structural and optical properties of the prepared sample. Film morphology and the thickness measurement of n-CdSe were carried out with AFM analysis. I-V characteristics curve of this junction confirmed the formation of Schottky contact betwe...

In this paper, the performance of a CNT-JLTFET under different values of torsional strains of 0, 3, and 5 degrees has been investigated. Simulation has been carried out using non-equilibrium Green’s function (NEGF) formalism in the mode-space approach and in the ballistic limit. The simulation results indicate that, under torsional strain, an increase occurs in the energy band-gap, and thus the...