Quantum dot light-emitting diodes (QD-LEDs) have been considered as potential display technologies with the characterizations of high color purity, flexibility, transparency, and cost efficiency. For the practical applications, the development of heavy-metal-free QD-LEDs from environment-friendly materials is the most important issue to reduce the impacts on human health and environmental pollu...

INVESTIGATION OF LOW COST SUBSTRATES APPROACHES FOR III-V SOLAR CELLS Marlene Lydia Lichty Old Dominion University, 2017 Director: Dr. Christopher G. Bailey With the need for cleaner energy sources, which can displace fossil fuel, the solar cell industry is of particular interest due to the abundancy of the Sun. Silicon currently dominates terrestrial applications, but efficiency improvements h...

This paper reports on a planar integrated technology which, unlike previous approaches, utilizes InP-based materials and airbridge technology to reduce parasitics by avoiding the use of a bridge-supporting dielectric. Verticalheterojunction varactors (VHV) and mixers were grown by the in-house Metalorganic-Chemical Vapor Deposition (MOCVD) system on S.1. InP substrates. A novel process is prese...

Contact freezing is a mode of atmospheric ice nucleation in which collision between dry nucleating particle (INP) and water droplet results considerably faster heterogeneous nucleation. The molecular mechanism such an enhancement is, however, still mystery. While earlier studies had attributed it to collision-induced transient perturbations, recent experiments point the pivotal role nanoscale p...

1 Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA 2 Department of Chemical and Biomolecular Engineering, University of California, Berkeley, California 94720-1460, USA 3 Department of Chemistry, University of California, Berkeley, California 94720-1460, USA 4 Laboratoire de Science et Ingénierie des Matériaux et Procédés (SIMaP), UMR CNRS 5266...

We discuss heterogeneous integrations and their impacts on computing, networking, and imaging applications. We will review photonic integration technologies including silicon, InP, GaAs, SiO2, Si3N4, and magneto-optical materials such as YIG and BIG. We will address new architectures, new capabilities, and performance enhancement brought into computing, networking, and imaging architectures thr...

A. 13-tan wavelength, InGaAsP-InP folded-cavity, siirface-emitting laser with CH4-H2 reactive ion-etched vertical and 45° angled facets was demonstrated for the first time. Continnoos-wave threshold currents of 32 mA have been achieved, with >15 mW CW power for the surface-emitted light These surface-emitting lasers with two dry-etched facets are suitable for wafer-level -esüng and for monolith...

Strain-compensated (SC) GaInAs/AlInAs/InP multiple-quantum-well structures and quantum cascade lasers (QCLs) with strain levels of 1% and as high as 1.5% were grown by organometallic vapor phase epitaxy (OMVPE). The structures were characterized by high-resolution X-ray (HRXRD) diffraction and atomic force microscopy (AFM), and narrow-ridge QCL devices were fabricated. HRXRD and AFM results ind...

Integrating optically active III-V materials on silicon/insulator platforms is one potential path towards improving the energy efficiency and performance of modern computing. Here we demonstrate applicability direct wafer bonding combined with plasma etching to fabrication complex nanophotonic systems out InP layers. We explore optimise InP, validating existing processes developing improved one...