This work presents a systematic study toward the design and first demonstration of high-performance n-type monolayer tungsten diselenide (WSe2) field effect transistors (FET) by selecting the contact metal based on understanding the physics of contact between metal and monolayer WSe2. Device measurements supported by ab initio density functional theory (DFT) calculations indicate that the d-orb...

In this paper, a comparative study of the treatment of raw and biotreated (upflow anaerobic sludge blanket, UASB) textile dye bath effluent using advanced oxidation processes (AOPs) is presented. The AOPs applied on raw and biotreated textile dye bath effluent, after characterization in terms of COD, colour, BOD and pH, were ozone, UV, UV/H2O2 and photo-Fenton. The decolorization of raw dye bat...

A new type of ferroelectric FET based on the single nanowire is demonstrated. The design of the side-gated architecture not only simplifies the manufacturing process but also avoids any postdeposition damage to the organic ferroelectric film. The devices exhibit excellent performances for nonvolatile memory applications, and the memory hysteresis can be effectively modulated by adjusting the si...

To my loving parents who always provided me a shelter under strong sun shines; My brothers who are my arms of strength, courage and directors; A precious gift of God, My sisters

We report on the nanosheet-thickness effects on the performance of top-gate MoS(2) field-effect transistors (FETs), which is directly related to the MoS(2) dielectric constant. Our top-gate nanosheet FETs with 40 nm thin Al(2)O(3) displayed at least an order of magnitude higher mobility than those of bottom-gate nanosheet FETs with 285 nm thick SiO(2), benefiting from the dielectric screening b...

With recent promising progress on nanoscale devices including semiconductor nanowires and nanowire crossbars, researchers are trying to explore the possibility of building nanoscale computing systems. We have designed a nanoscale application-specific architecture called NASIC, which is based on semiconductor nanowire grids and FETs at crosspoints. In this paper, we propose a built-in redundancy...

The electronic and photoconductive characteristics of CdTe nanowire-based field effect transistors were studied systematically. The electrical characterization of a single CdTe nanowire FET verifies p-type behavior. The CdTe NW FETs respond to visible-near infrared (400-800 nm) incident light with a fast, reversible and stable response characterized by a high responsivity (81 A W(-1)), photocon...

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