نتایج جستجو برای: impurity scattering

تعداد نتایج: 123561  

Journal: :Physical review letters 2010
Yonatan Dubi Alexander V Balatsky

The effect of impurities which induce local interlayer tunneling in bilayer exciton condensates is discussed. We show that a localized single-fermion bound state emerges inside the gap for any strength of impurity scattering and calculate the dependence of the impurity state energy and wave function on the potential strength. We show that such an impurity-induced single-fermion state enhances t...

Journal: :The Journal of chemical physics 2004
Yunfei Chen Jennifer R Lukes Deyu Li Juekuan Yang Yonghua Wu

Thermal expansion and impurity effects on the lattice thermal conductivity of solid argon have been investigated with equilibrium molecular dynamics simulation. Thermal conductivity is simulated over the temperature range of 20-80 K. Thermal expansion effects, which strongly reduce thermal conductivity, are incorporated into the simulations using experimentally measured lattice constants of sol...

1999
Kikuo Harigaya

Effects of the superconducting pair potential on the impurity scattering processes in metallic carbon nanotubes are studied theoretically. The backward scattering of electrons vanishes in the normal state. In the presence of the superconducting pair correlations, the backward scatterings of electronand hole-like quasiparticles vanish, too. The impurity gives rise to backward scatterings of hole...

2013
M. Tohidi F. Z. Tohidi

Temperature and doping dependencies of electron mobility in InP semiconductor has been calculated using an iterative technique. The following scattering mechanisms, i.e, impurity, polar optical phonon, acoustic phonon and piezoelectric are included in the calculation. It is found that the electron mobility decreases monotonically as the temperature increases from 100 K to 600 K. The low tempera...

Journal: :Physical review letters 2013
S Ishida M Nakajima T Liang K Kihou C H Lee A Iyo H Eisaki T Kakeshita Y Tomioka T Ito S Uchida

We investigated the in-plane resistivity anisotropy for underdoped Ba(Fe(1-x)Co(x))(2)As(2) single crystals with improved quality. We demonstrate that the anisotropy in resistivity in the magnetostructural ordered phase arises from the anisotropy in the residual component which increases in proportion to the Co concentration x. This gives evidence that the anisotropy originates from the impurit...

2002
Y. Ohashi

Local magnetic properties around a nonmagnetic impurity are investigated in high-Tc cuprate superconductors. We consider a model two-dimensional dx2−y2-wave superconductor with strong antiferromagnetic (AF) spin fluctuations and calculate the spin susceptibility around the impurity. We show that the uniform susceptibility (χ(0)), which is usually suppressed in spin-singlet superconductivity, is...

1994
Shin-ichi Takagi Akira Toriumi Masao Iwase Hiroyuki Tango

This paper reports the studies of the inversion layer mobility in nand p-channel Si MOSFET's with a wide range of substrate impurity concentrations to 10l8 cm-"). The validity and limitations of the universal relationship between the inversion layer mobility and the effective normal field (E,E) are examined. It is found that the universality of both the electron and hole mobilities does hold up...

Journal: :Physical review. B, Condensed matter 1993
Hu Das Sarma S

We calculate the electron elastic mean free path due to ionized impurity scattering in semiconductor quantum wires, using a scheme in which the screened ionized impurity potential and the electron screening self-consistently determine each other. By using a short-range scattering potential model, we obtain an exact solution of the self-energy within the self-consistent Born and “noncrossing” ap...

Journal: :Physical review letters 1994
Poilblanc Scalapino Hanke

(Received) Scattering by a single impurity introduced in a strongly correlated electronic system is studied by exact diagonalization of small clusters. It is shown that an inert site which is spinless and unable to accomodate holes can give rise to strong resonant scattering. A calculation of the local density of state reveals that, for increasing antiferromagnetic exchange coupling, d, s and p...

2007
F. V. Kyrychenko C. A. Ullrich

In III-V dilute magnetic semiconductors such as Ga1−xMnxAs, the impurity positions tend to be correlated, which can drastically affect the electronic transport properties of these materials. Within the memory function formalism we have derived a general expression for the current relaxation kernel in spin and charge disordered media and have calculated spin and charge scattering rates in the we...

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