Due to large polarization effects, two-dimensional electron gas (2DEG) concentrations higher than 1x10 cm can be produced at the AlN/GaN heterojunction with AlN barriers as thin as 2 nm. This ultra-shallow channel together with the wide bandgap of AlN (6.2 eV) makes AlN/GaN heterojunction field effect transistors (HFET) extremely attractive for high frequency (>100 GHz) high power applications....

To meet the growing demand for a high-power Heterostructure Field-Effect Transistor (HFET) family based on InP, we have developed and characterized a circuitcapable InA1As/n+-InP HFET technology employing InP not merely as a substrate but also epitaxially as the channel and as an etch-stopper in a selectively-recessed gate scheme. This thesis presents an experimental assessment of the benefits ...

Preface This report is a summary of the activities in the field of resonant tunneling device circuit design. (GMUD) during the first year of the Microelectronics Advanced Research Initiative projects ANSWERS (Autonomous Nanoelectronic Systems with Extended Replication and Signalling) and LOCOM (Logic Circuits with Reduced Complexity based on Devices with Higher Functionality). As part of the AN...

We report a detailed investigation of flicker noise in novel GaN/AlGaN heterostructure field-effect transistors (GaN HFET). Low values of 1=f noise found in these devices (i.e., the Hooge parameter is on the order of 10 ) open up the possibility for applications in communication systems. We have examined the scaling of the noise spectral density with the device dimensions in order to optimize t...

In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT)-based biosensor for the detection of C-reactive protein (CRP) using a null-balancing circuit. A null-balancing circuit was used to measure the output voltage of the sensor directly. The output voltage of the proposed biosensor was varied by antigen-antibody interactions on the gate surface due to CRP charges. The Al...