Ga-doped ZnO (GZO) thin films were prepared by pulsed laser deposition (PLD) method on a large substrate at room temperature in vacuum. Two regions of apparently different optical transmittance were found in the deposited area, and their properties such as thickness, sheet resistance, optical and electrical properties and composition ratio were measured. The transparent region has low sheet res...

• In this work, the first integration of a continuous polycrystalline CdZnO thin layer on GaAs, one dominant mid-IR optoelectronic platforms, is reported. The preserved out-of-plane orientation crystal grain yields very minor degradation plasma damping compared to monocrystalline grown sapphire. CdZnO/GaAs system holds Surface Plasmon Polaritons with figure merit comparable best TCOs in mid-IR:...

Thin zinc oxide doped with gallium layers were prepared by rf-magnetron sputtering from nanoparticles synthesized by sol-gel method. Increasing the deposition temperature has resulted in a change of preferred orientations of (002) with an intermediate step-like structure of powder. The films showed different morphologies of the surface of the grains that are dependent on the deposition temperat...