Large parasitic series resistances of heterojunction bipolar transistor (HBT) are shown to cause a sharp kink in the base current (IB) of the Gummel plot at elevated temperatures under high collector currents (IC) and low base-collector (b-c) applied bias (VBC). This effect was analyzed and attributed to the temperature dependence of low-field and high field mobilities of undepleted and deplete...

This paper describes a three{dimensional simulator for semiconductor devices in stationary state developed on a message passing multiprocessor. A Gummel style nonlinear iteration was used, and the Poisson and the continuity equations were discretized using the nite element method. A new iterative scheme was introduced in order to solve the non{linear Poisson equation. The nonsymmetric continuit...

The basic drift{diiusion model for semiconductors gives rise to a system of three coupled partial diierential equations: one potential eqation and two continuity equations. GG artner 6] was the rst to point out that, using diierent discretization schemes for both types of equations, the coupling might not be represented correctly. This paper further elaborates his ideas: in an abstract setting ...

Abstract We propose a finite volume scheme for convection-diffusion equations with nonlinear diffusion. Such equations arise in numerous physical contexts. We will particularly focus on the drift-diffusion system for semiconductors and the porous media equation. In these two cases, it is shown that the transient solution converges to a steady-state solution as t tends to infinity. The introduce...

This paper presents a scaleable model generation methodology of bipolar transistors. Although the methodology has been targeted towards the compact model HICUM, it can also be applied to an appropriate subcircuit extension of the conventional SPICE Gummel-Poon model (SGPM), thereby allowing its usage in any environment. The methodology enables a generation of extensive model libraries containin...

This paper is concerned with numerical algorithms for the bipolar quantum drift diiusion model. For the thermal equilibrium case a quasi-gradient method minimizing the energy functional is introduced and strong convergence is proven. The computation of current{voltage characteristics is performed by means of an extended Gummel{iteration. It is shown that the involved xed point mapping is a cont...

Abstract The van Roosbroeck system models current flows in (non-)degenerate semiconductor devices. Focusing on the stationary model, we compare excess chemical potential discretization scheme, a flux approximation which is based modification of drift term densities, with another state-of-the-art Scharfetter–Gummel namely diffusion-enhanced scheme. Physically, scheme can be interpreted as modifi...

This paper is concerned with numerical algorithms for the bipolar quantum drift diiusion model. For the thermal equilibrium case a quasi-gradient method minimizing the energy functional is introduced and strong convergence is proven. The computation of current{voltage characteristics is performed by means of an extended Gummel{iteration. It is shown that the involved xed point mapping is a cont...

A quantum corrected Poisson-Nernst-Planck (QCPNP) model is proposed for simulating ionic currents through biological ion channels by taking into account both classical and quantummechanical effects. A generalized Gummel algorithm is also presented for solving the model system. Compared with the experimental results of X-ray crystallography, it is shown that the quantum PNP model is more accurat...

A new parameter extraction methodology local ratio evaluation is presented which is well suited for converting one model to another. An example is given for VBIC model extraction by going through Spice Gummel-Poon (SGP) model. It is based on the fact that the VBIC model is a direct enhancement and extension of SGP model. Firstly, the standard SGP model is extracted in the standard way. Then, SG...