McCulloch-Pitts neuron structures are comprised of a number synaptic inputs and decision element, called soma. In this paper, we propose 5-bit Graphene Nanoribbon (GNR)-based DAC to fulfill the role summation element featuring programmable input weights. The proposed GNR-based relies on: (i) GNR unit current cells (ii) logic thermometric decoding block. Our implementation is based on mapping st...

Abstract Integration of graphene and hexagonal boron nitride (hBN) in lateral heterostructures has provided a route to broadly engineer the material properties by quantum confinement electrons or introduction novel electronic magnetic states at interface. In this work we demonstrate heteroepitaxial growth nanoribbons (GNRs) passivated hBN using high-temperature molecular beam epitaxy (HT-MBE) g...

Graphene nanoribbons (GNR), can be prepared in bulk quantities for large-area applications by reducing the product from the lengthwise oxidative unzipping of multiwalled carbon nanotubes (MWNT). Recently, the biomaterials application of GNR has been explored, for example, in the pore to be used for DNA sequencing. Therefore, understanding the polymer behavior of GNR in solution is essential in ...

Address correspondence to guoj@ufl .edu ABSTRACT We present a semi-analytical model incorporating the effects of edge bond relaxation, the third nearest neighbor interactions, and edge scattering in graphene nanoribbon fi eld-effect transistors (GNRFETs) with armchair-edge GNR (AGNR) channels. Unlike carbon nanotubes (CNTs) which do not have edges, the existence of edges in the AGNRs has a sign...

We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ~10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ~0.14 eV. Contrary to prior observations of disordered transport and severe edge-roughness effects of GNRs, the experimental results presented here clearly show that the transport mechanism in carefully fabricated ...

Graphene nanoribbon (GNR) with free edges demonstrates unique pre-existing edge energy and edge stress, leading to non-flat morphologies. Using molecular dynamics (MD) methods, we evaluated edge energies as well as edge stresses for four different edge types, including regular edges (armchair and zigzag), armchair edge terminated with hydrogen and reconstructed armchair. The results showed that...

The recent fabrication of graphene nanoribbon GNR field-effect transistors poses a challenge for firstprinciples modeling of carbon nanoelectronics due to many thousand atoms present in the device. The state of the art quantum transport algorithms, based on the nonequilibrium Green function formalism combined with the density-functional theory NEGF-DFT , were originally developed to calculate s...

Graphene nanoribbon (GNR) with free edges can exhibit non-flat morphologies due to preexisting edge stress. Using molecular dynamics (MD) simulations, we investigate the freeedge effect on the shape transition in GNRs with different edge types, including regular (armchair and zigzag), armchair terminated with hydrogen and reconstructed armchair. The results show that initial edge stress and ene...

Bandgap engineering of graphene is an essential step toward employing graphene in electronic and sensing applications. Recently, graphene nanoribbons (GNRs) were used to create a bandgap in graphene and function as a semiconducting switch. Although GNRs with widths of <10 nm have been achieved, problems like GNR alignment, width control, uniformity, high aspect ratios, and edge roughness must b...

The electronic transport of zigzag-edged graphene nanoribbon (ZGNR) with local Stone-Wales (SW) defects is systematically investigated by first principles calculations. While both symmetric and asymmetric SW defects give rise to complete electron backscattering region, the well-defined parity of the wave functions in symmetric SW defects configuration is preserved. Its signs are changed for the...