We investigated the temporal evolution of nickel-silicide phase-formation and the simultaneous redistribution of platinum during silicidation of a 10 nm thick Ni0.95Pt0.05 film on a Si(100) substrate. Grazing incidence x-ray diffraction (GIXRD) and atom-probe tomography (APT) measurements were performed on as-deposited films and after rapid thermal annealing (RTA) at 320 or 420 C for different ...

Abstract The present paper focuses on the properties of p–Si/ ZnS x Se 1−x (0 ≤ 1) heterojunctions in photodetector applications. heterostructures were fabricated by depositing ZnSSe Si wafer using thermal co-evaporation technique with and ZnSe powders. GIXRD study showed that films cubic phase, prominent peak was shifted composition x. maximum crystallite size found for = 0.8. presence point d...

• Thin ZnO films can be grown at low temperatures using the PE-ALD method The photocatalytic activity of thin is strongly enhanced show a significantly higher excitation rate in UV spectral region degree crystallinity lower contain high concentration zinc vacancies In this work, we present large, tenfold enhancement by plasma-enhanced atomic layer deposition (PE-ALD) 100 °C, compared to values ...

Ag/TiO2 thin films were prepared using the sol-gel spin coating method. The microstructural growth behaviors of elucidated real-time synchrotron radiation imaging, its structure was determined grazing incidence X-ray diffraction (GIXRD), morphology imaged field emission scanning electron microscopy (FESEM), and surface topography examined atomic force microscope (AFM) in contact mode. cubical s...