A small-signal equivalent circuit for graphene field-effect transistors is proposed considering the explicit contribution of effects at metal-graphene interfaces by means contact resistances. methodology to separate resistances from intrinsic parameters, obtained a de-embedding process, and extrinsic parameters considered. The experimental high-frequency performance three devices two different ...

In order to push the upper frequency limit of high speed electronics further, thereby extending the range of applications, new device technologies and materials are continuously investigated. The 2D material graphene, with its intrinsically extremely high room temperature charge carrier velocity, is regarded as a promising candidate to push the frequency limit even further. However, so far most...

We report on the fabrication and characterisation of graphene field-effect transistor (GFET) biosensors for detection Clusterin, a prominent protein biomarker Alzheimer’s disease (AD). The GFET sensors were fabricated Si/SiO 2 substrate using photolithographic patterning metal lift-off techniques with evaporated chromium sputtered gold contacts. Raman Spectroscopy was performed devices to deter...

Scalable production of all-electronic DNA biosensors with high sensitivity and selectivity is a critical enabling step for research and applications associated with detection of DNA hybridization. We have developed a scalable and very reproducible (>90% yield) fabrication process for label-free DNA biosensors based upon graphene field effect transistors (GFETs) functionalized with single-strand...

Cardiovascular diseases result in millions of deaths around the globe, many which could have been avoided if identified at an early stage. Preventive cardiovascular disease diagnostics plays a vital role reducing critical fatality rate by allowing to take timely necessary precautions. Here, we demonstrate exceptional properties aptamer modified graphene-based FET (GFET) for cardiac troponin I (...

We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET) using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at various back gate voltages is monitored as a function of tip voltage and tip position. Near the Dirac point, the response of graphene resistance to the tip v...