Abstract Van der Waals integration with abundant two-dimensional materials provides a broad basis for assembling functional devices. In specific van heterojunction, the band alignment engineering is crucial and feasible to realize high performance multifunctionality. Here, we design ferroelectric-tuned heterojunction device structure by integrating GeSe/MoS 2 VHJ poly (vinylidene fluoride-trifl...

Composite engineering favors high thermoelectric performance by tuning the carrier and phonon transport. Herein, orthorhombic rhombohedral dual-phase GeSe are designed in situ tailoring chemical bonds. Atom probe tomography verifies coexistence of a covalently bonded phase metavalently GeSe-InTe alloys. The production simultaneously increases concentration, mobility, band degeneracy, density-of...

In order to make 3D crossbar memory architectures viable, selector elements with highly non-linear current–voltage characteristics are required. Ovonic Threshold Switching (OTS) is a phenomenon observed in amorphous chalcogenides, such as GeSe, that shows promise for application selectors. this paper, the impact of alloying metallic (Zr), metalloid (B, Sb), and non-metallic (C, N) function thei...

Binary IV–VI chalcogenides MXs (SnS, SnSe, SnTe, GeS, GeSe, and GeTe), as a family two-dimensional (2D) semiconductor material, have proper bandgap, high carrier mobility, stability in ambient conditions, pucker structure, hence they are potential channel materials for the next-generation electronic optoelectronic devices. 2D devices should directly contact metal electrodes to inject suitable t...