The growth of III-V semiconductors on silicon would allow the integration of their superior (opto-)electronic properties with silicon technology. But fundamental issues such as lattice and thermal expansion mismatch and the formation of antiphase domains have prevented the epitaxial integration of III-V with group IV semiconductors. Here we demonstrate the principle of epitaxial growth of III-V...

We observe the formation of metastable AuGe phases without quenching, during strictly isothermal nucleation and growth of Ge nanowires, using video-rate lattice-resolved environmental transmission electron microscopy. We explain the unexpected formation of these phases through a novel pathway involving changes in composition rather than temperature. The metastable catalyst has important implica...

The dependence of the resistivity with changing diameter of heavily-doped self-seeded germanium nanowires was studied for the diameter range 40 to 11 nm. The experimental data reveal an initial strong reduction of the resistivity with diameter decrease. At about 20 nm a region of slowly varying resistivity emerges with a peak feature around 14 nm. For diameters above 20 nm, nanowires were found...

We present polarized emission from single hexagonal silicon–germanium (hex-SiGe) nanowires. To understand the nature of band-to-band hex-SiGe, we have performed photoluminescence spectroscopy to investigate polarization properties hex-SiGe core–shell observe a degree 0.2 0.32 perpendicular nanowire c-axis. Finite-difference time-domain simulations were influence dielectric contrast structures. ...

Metallic nanowires show unique physical properties owing to their one-dimensional nature. Many of these unique properties are intimately related to electron-electron interactions, which have a much more prominent role in one dimension than in two or three dimensions. Here we report the direct visualization of quantum size effects responsible for preferred lengths of self-assembled metallic irid...

A method combining laser ablation cluster formation and vapor-liquid-solid (VLS) growth was developed for the synthesis of semiconductor nanowires. In this process, laser ablation was used to prepare nanometer-diameter catalyst clusters that define the size of wires produced by VLS growth. This approach was used to prepare bulk quantities of uniform single-crystal silicon and germanium nanowire...

Herein, we report the formation of multisegment Si-Ge axial heterostructure nanowires in a wet chemical synthetic approach. These nanowires are grown by the liquid injection of the respective silicon and germanium precursors into the vapor phase of an organic solvent in which a tin-coated stainless steel substrate is placed. The Si-Ge transition is obtained by sequential injection with the more...