In this work, for the first time, the valence band offset, ∆EV, between strained Si and strained Si1-yGey on relaxed Si1-xGex, has been measured using a combination of experimentation and modeling. Such structures have been shown to offer large mobility enhancements for both electrons and holes, and knowledge of the band parameters is critical in order to optimize and predict device behavior [1...

In this paper, the electrical performance of double gate organic field effecttransistor (DG-OFET) are thoroughly investigated and feasibility of the deviceas an efficient biosensor is comprehensively assessed. The introduced deviceprovides better gate control over the channel, yielding better charge injectionproperties from source to channel and providing higher on-state...

The recent development of p-GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared (\40 mm) detectors is briefly reviewed. The emphasis is on the detector performance, which includes responsivity, quantum efficiency, bias effects, cut-off wavelength, uniformity, noise, and negative capacitance characteristics. Promising results indicate that p-GaAs HIWIP detector...

Activation Energy is an important feature in determining the formation of ohmic contact on a semiconducting material. Activation energy depends on workfunction of the semiconductor. Thus, there is a good co-relation between the ohmicity, activation energy and workfunction. In this work, Cadmium Sulphide (CdS) thin film of 2 μm thickness is the semiconducting material fabricated using Chemical V...

The concept of homojunction infernal photoemission far-infrared (FIR) detectors has been successfully demonstrated using forward biased Si p-i-n diodes at 4.2 K. The basic structure consists of a heavily doped IR absorber layer and an intrinsic (or lightly doped) layer. An interfacial workfunction between these regions defines the long-wavelength cutoff (X,) of the detector. Three types of dete...

application of quantum-dot is a promising technology for implementing digital systems at nano-scale.  quantum-dot cellular automata (qca) is a system with low power consumption and a potentially high density and regularity. also, qca supports the new devices with nanotechnology architecture. this technique works based on electron interactions inside quantum-dots leading to emergence of quantum ...

In this paper, novel hybrid MOSFET(HMOS) structure has been proposed to reduce the gate leakage current drastically. This novel hybrid MOSFET (HMOS) uses source/drain-to-gate non-overlap region in combination with high-K layer/interfacial oxide as gate stack. The extended S/D in the non-overlap region is induced by fringing gate electric field through the high-k dielectric spacer. The gate leak...

In advance longwall mining, the safety of mine network, production rate, and consequently, economic conditions of a mine are dependent on the stability conditions of gate roadways. The gate roadway stability is a function of two important factors: 1) characteristics of the excavation damaged zone (EDZ) above the gate roadway and 2) loading effect due to the caving zone (CZ) above the longwall w...

Surface doping of ZnO allows for tailoring the surface chemistry material while preserving superb electronic structure bulk. Apart from obvious changes in adsorption energies and activation catalysis, can alter workfunction allow it to be tuned specific photocatalytic optoelectronic applications. We present first-principles calculations Mn on (0001) surface. Various dopant concentrations have b...

in advance longwall mining, the safety of mine network, production rate, and consequently, economic conditions of a mine are dependent on the stability conditions of gate roadways. the gate roadway stability is a function of two important factors: 1) characteristics of the excavation damaged zone (edz) above the gate roadway and 2) loading effect due to the caving zone (cz) above the longwall w...