This work investigates how a time-modulated gate-voltage influences the differential conductance G of a saddle-point constriction. The constriction is modeled by a symmetric saddle-point potential and the time-modulated gate-voltage is represented by a potential of the form » 0 #(a/2!Dx!x # D) cos(ut). For +u less than half of the transverse subband energy level spacing, gate-voltage-assisted (...

In this paper, a new approach to enhance the bandwidth of flipped voltage follower is explored. The proposed approach is based on gate-body driven technique. This technique boosts the transconductance in a MOS transistor as both gate and body/bulk terminals are tied together and used as signal input. This novel technique appears as a good solution to merge the advantages of gate-driven and bulk...

We present a study on the metal–graphene contact properties. Utilizing a dual-gate field-effect transistor device, an energetic separation between the Fermi level and the Dirac point in the contact areas can be adjusted deliberately by applying an appropriate front-gate voltage that acts only on the channel. This front-gate voltage is compensated by an opposite large-area backgate voltage, ther...

The on/off current ratio in organic ferroelectric field-effect transistors (FeFETs) is largely determined by the position of the threshold voltage, the value of which can show large device-to-device variations. Here we show that by employing a dual-gate layout for the FeFET, we can gain full control over the on/off ratio. In the resulting dual-gate FeFET the ferroelectric gate provides the memo...

Hyperpolarization-activated HCN channels are modulated by direct binding of cyclic nucleotides. For HCN2 channels, cAMP shifts the voltage dependence for activation, with relatively little change in the maximal conductance. By contrast, in spHCN channels, cAMP relieves a rapid inactivation process and produces a large increase in maximum conductance. Our results suggest that these two effects o...

We investigate the influence of space-quantization effect and poly-gate depletion on the inversion layer capacitance Cinv, total gate capacitance Ctot and threshold voltage VT in scaled Si-MOSFETs. We also present an analytical expression for the total gate capacitance Ctot that uses classical charge description and takes into account the depletion of the poly-silicon gates. Our simulation resu...

Solution-processed gate dielectrics were fabricated with the combined ZrO2 and Al2O3 (ZAO) in the form of mixed and stacked types for oxide thin film transistors (TFTs). ZAO thin films prepared with double coatings for solid gate dielectrics were characterized by analytical tools. For the first time, the capacitance of the oxide semiconductor was extracted from the capacitance-voltage propertie...

1566-1199/$ see front matter 2010 Elsevier B.V doi:10.1016/j.orgel.2010.07.026 * Corresponding author at: Department of Elec Engineering, The Ohio State University, Columbus, +1 614 247 6235; fax: +1 614 292 7596. E-mail address: [email protected] (P.R. Berger). Here we report on low-supply voltage and high-performance regioregular poly-(3-hexythiophene) (P3HT) organic thin-film transistors (OTF...

Energy consumption of digital circuits has become a primary constraint in electronic design. The increasing popularity of the portable devices like smart phone, ipad, tablet and notebook has created an overwhelming demand for extended battery life of these devices. Numerous methods for energy reduction in CMOS circuits have been proposed in the literature. Power reduction techniques at various ...