This study presents the fabrication and improved properties of an AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor (MOS-PHEMT) using liquid phase deposited titanium dioxide (LPD-TiO₂) as a gate dielectric. Sulfur pretreatment and postoxidation rapid thermal annealing (RTA) were consecutively employed before and after the gate dielectric was deposited to fi...

It is known that conventional metal-oxide-silicon ~MOS! devices will have gate tunneling related problems at very thin oxide thicknesses. Various high-dielectric-constant materials are being examined to suppress the gate currents. In this article we present theoretical results of a charge control and gate tunneling model for a ferroelectric-oxide-silicon field effect transistor and compare them...

This paper has reported on the electrical and nonstructural of polymer-based materials in corporation NiO (Nickel oxide) in concentrations of 0.2%, 0.4% and 0.8% by weight of PVA (polyvinyl alcohol) polymer. Nanocrystallites phases and properties were characterized with using X-ray diffraction (XRD), Fourier transfer infrared radiation (FTIR),Energy distribution X-ray(EDX) techniques and X-Map ...

Thin film transistor circuits using organic semiconductors (oTFT) have received intense interest for applications requiring structural flexibility, large area coverage, low temperature processing, and low-cost [1]. Pentacene TFTs have demonstrated the highest performance among TFTs with an organic semiconductor channel. A major limitation, however, has been unusually high operating voltages (20...

For the 45nm technology node, high-k+metal gate transistors have been introduced for the first time in a high-volume manufacturing process [1]. The introduction of a high-k gate dielectric enabled a 0.7x reduction in Tox while reducing gate leakage 1000x for the PMOS and 25x for the NMOS transistors. Dual-band edge workfunction metal gates were introduced, eliminating polysilicon gate depletion...

Since 1979 various papers and have been published on modeling the gate dielectric using Time Dependent Dielectric Breakdown (TDDB) testing. There are primarily 2 models used, the linear E field model and the 1/E field model. These are based on different failure kinetics and both predict vastly different lifetimes for the dielectric. As a result the majority of I.C. manufacturers used the 1/E mo...

Field-effect transistors (FETs) were fabricated with a thin film of 3,10-ditetradecylpicene, picene-(C14H29)2, formed using either a thermal deposition or a deposition from solution (solution process). All FETs showed p-channel normally-off characteristics. The field-effect mobility, μ, in a picene-(C14H29)2 thin-film FET with PbZr0.52Ti0.48O3 (PZT) gate dielectric reached ~21 cm2 V(-1) s(-1), ...

We report on the nanosheet-thickness effects on the performance of top-gate MoS(2) field-effect transistors (FETs), which is directly related to the MoS(2) dielectric constant. Our top-gate nanosheet FETs with 40 nm thin Al(2)O(3) displayed at least an order of magnitude higher mobility than those of bottom-gate nanosheet FETs with 285 nm thick SiO(2), benefiting from the dielectric screening b...