نتایج جستجو برای: gate

تعداد نتایج: 42907  

2011
Neha Srivastava G. S. Tripathi Madan Mohan Malaviya

This paper discusses the type of capacitances for Single Gate MOSFET and Double Gate MOSFET including their quantity. The effect of parasitic capacitance makes double gate MOSFET more suitable component for the designing of digital logic switches than single gate MOSFET. Here, we introducing Independent double gate MOSFET operation based on VeSFET concept. Then introducing with the total capaci...

2004
Yee-Chia Yeo

Reduction of the gate length and gate dielectric thickness in complementary metal oxide semiconductor (CMOS) transistors for higher performance and circuit density aggravates problems such as poly-silicon (poly-Si) gate depletion, high gate resistance, and dopant penetration from doped poly-Si gate. To alleviate these problems in nanoscale transistors, there is immense interest in the replaceme...

In this paper a novel all-optical logic NAND, NOR and XOR gate based on nonlinear directional coupler theory is demonstrated. We use the identical structure which contains three waveguides, for designing these gates; the only difference however, is the power of inputs light beam. In other words, while a beam with 4 W/μm in power considered as logical one, the output is NAND gate and if a beam w...

In this paper a novel all-optical logic NAND, NOR and XOR gate based on nonlinear directional coupler theory is demonstrated. We use the identical structure which contains three waveguides, for designing these gates; the only difference however, is the power of inputs light beam. In other words, while a beam with 4 W/μm in power considered as logical one, the output is NAND gate and if a beam w...

2002
M. M. A. Hakim

We study gate capacitance of deep submicron MOSFETs with high-K gate dielectrics. Schrödinger’s equation is solved by applying an open boundary condition at silicon-gate dielectric interface. Self-consistent numerical results reveal that accounting for wave function penetration into the gate dielectric causes the carrier distribution to be shifted closer to the gate dielectric. This effect incr...

Journal: :Journal of the Korea Institute of Information and Communication Engineering 2014

Journal: :Nanotechnology 2016
I Zeimpekis K Sun C Hu N M J Ditshego O Thomas M R R de Planque H M H Chong H Morgan P Ashburn

We demonstrate the advantages of dual-gate polysilicon nanoribbon biosensors with a comprehensive evaluation of different measurement schemes for pH and protein sensing. In particular, we compare the detection of voltage and current changes when top- and bottom-gate bias is applied. Measurements of pH show that a large voltage shift of 491 mV pH(-1) is obtained in the subthreshold region when t...

1994
Fumio Ishizaki Tetsuya Takine Toshiharu Hasegawa

This paper considers a discrete-time queue with a gate. The system has a single server and a gate. Customers arrive to the system according to a batch Bernoulli process and wait for the next gate opening in front of the gate. When the gate opens, all the customers who are waiting at the gate move into the inside of the gate. The server serves the customers only inside the gate. The gate closes ...

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