Giant axonal neuropathy (GAN) is a progressive neurodegenerative disease caused by autosomal recessive mutations in the GAN gene resulting in a loss of a ubiquitously expressed protein, gigaxonin. Gene replacement therapy is a promising strategy for treatment of the disease; however, the effectiveness and safety of gigaxonin reintroduction have not been tested in human GAN nerve cells. Here we ...

High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN ep...

The synthesis of hexagonal wurzite one-dimensional (1D) GaN nanostructures on c-Al2O3 substrates was investigated using a thermal chemical vapor deposition (CVD) process. The diameter of the GaN nanostructures was controlled by varying the growth time using a mixture of GaN powder and Ga metal with the ammonia gas reaction. The morphologies of the GaN nanowires and nanorods were confirmed by fi...

Gallium nitride (GaN) thin films on sapphire substrates were successfully separated and transferred onto Si substrates by pulsed UVlaser processing. A single 600 mJ/cm, 38 ns KrF excimer laser pulse was directed through the transparent substrate to induce a rapid thermal decomposition of the GaN at the GaN/sapphire interface. The decomposition yields metallic Ga and N2 gas that allows separatio...

The performance of devices fabricated from GaN and related compounds is strongly affected by the resistances caused by electrical contacts. To avoid excessive heating resulting in a failure of the device, speciŽc contact resistances less than ,10 Wcm for light-emitting diodes (LEDs) and less than ,10 Wcm for laser diodes are required. This applies in particular to ohmic contacts on p-doped GaN ...

The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN e...

We demonstrate a new doping scheme where photo-induced carriers from graphene quantum dots (GQDs) can be injected into GaN and greatly enhance photoluminescence (PL) in GaN epilayers. An 8.3-fold enhancement of PL in GaN is observed after the doping. On the basis of time-resolved PL studies, the PL enhancement is attributed to the carrier transfer from GQDs to GaN. Such a carrier transfer proce...

This article reports on the studies of porous GaN prepared by ultra-violet (UV) assisted electrochemical etching in a solution of 4:1:1 HF: CH3OH:H2O2 under illumination of an UV lamp with 500 W power for 10, 25 and 35 minutes. The optical properties of porous GaN sample were compared to the corresponding as grown GaN. Porosity induced photoluminescence (PL) intensity enhancement was found in t...

With an appropriate high anneal temperature under H2 atmosphere, GaN quantum dots (QDs) have been fabricated via GaN thermal decomposition in metal organic chemical vapor deposition (MOCVD). Based on the characterization of atomic force microscopy (AFM), the obtained GaN QDs show good size distribution and have a low density of 2.4 × 10(8) cm(-2). X-ray photoelectron spectroscopy (XPS) analysis...

Gallium nitride (GaN), in contrast to other commonly used piezoceramics, is a semiconductor that exhibits piezoresistive in addition to piezoelectric effects. The large piezoresponse – combined piezoelectric and piezoresistive effects – of GaN points out possible applications of GaN-based material systems in resonant devices. While the static piezoresistive response of GaN is small [1], the tim...