The rapid progress in semiconductor materials and devices has promoted the development of the sensors industry. Large band gap semiconductors are ideal candidates for a variety of sensor applications. In particular, gallium nitride (GaN) is used as the sensing element for the development of chemical sensors. The recognition mechanism is based on the selective interaction of anions in solution w...

Prominent progress has been made in nitride semiconductor since high bright blue LED has developed in 1993. It has also expanded to an industry after applied to white LED. These LEDs are produced by the epitaxial growth of nitride semiconductor layers on sapphire (a Al2O3) substrate. On the other hand, recording density in optical disks has increased from CD in 1980s to DVD in latter 1990s. Las...

Gallium nitride (GaN) as a wide-band gap material has been widely used in solid-state lighting. Thanks to its high nonlinearity and refractive index contrast, GaN-on-insulator (GaNOI) is also promising platform for nonlinear optical applications. Despite intriguing proprieties, applications of GaN have rarely studied due the relatively loss waveguides (2 dB/cm). In this letter, we report GaNOI ...

Abstract We report laser emission from gallium nitride (GaN) microrods that are introduced into mammalian cells and the application of these for cell labeling. GaN were grown on graphene-coated SiO 2 /Si substrates by metal-organic vapor phase epitaxy. The easily detached because weakness van der Waals forces between graphene. uptake HeLa via endocytosis viability after investigated. Normal cel...

We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The χ2 nonlinear susceptibility is measured to be as high as 16 ± 7 pm/...