This paper used molecular dynamics simulation to reveal the origins of ductile plasticity in polycrystalline gallium arsenide (GaAs) during its nanoscratching. Velocity-controlled nanoscratching tests were performed with a diamond tool study friction-induced deformation behaviour GaAs. Cutting temperature, sub-surface damage depth, cutting stresses, evolution dislocations and subsequent microst...

A comprehensive physical model is used in a twodimensional numerical simulation of highly doped gallium arsenide MESFETs. Particular attention is paid to the formulation of the numerical schemes and boundary conditions to ensure accurate modelling. A specially formulated current continuity finite difference equation is used, which produces stable, accurate and efficient solutions, even at carri...

A novel extension to the molten core method was employed realize a glass-clad, crystalline gallium arsenide (GaAs) fiber for first time author’s knowledge. GaAs is of considerable interest its optoelectronic and nonlinear properties, but decomposition volatility, usually leading incongruent solidification, normally preclude melt-processing under ambient conditions into an optical fiber. Present...

Possible Health Hazards Associated with the Use of Toxic Metals in Semiconductor Industries: Swaran J.S. FLORA. Division of Pharmacology and Toxicology, Defence Research and Development Establishment, Gwalior, India— Gallium Arsenide (GaAs), Indium Arsenide (InAs) and Indium Phosphide (InP) are the intermetall ic compounds that are recognised as a potential health risk to workers occupationally...

In paper the influence of parameters inductively coupled chloropentafluoroethane plasma on rate and characteristics gallium arsenide etching was studied. Etched GaAs profiles by white light interferometry scanning electron microscopy were investigated. It turned out that process does not depend freon flow, but forward inductive power, as well pressure determined. this case, when power generator...

The paper describes the infrared (IR) thermal measurement facility at De Montfort University and the use of the facility to make IR temperature measurements on RF devices. Some of the limitations with conventional IR measurements will be described; including effects related to the low emissivity and optical transparency of materials. A novel method for improving the accuracy of IR temperature m...

Todd Schumann, Sefaattin Tongay, Arthur F. Hebard Department of Physics, University of Florida, Gainesville FL 32611 This article demonstrates the formation of Schottky diodes on silicon (Si), gallium arsenide (GaAs), and 4H-silicon carbide (4H-SiC) using the semimetal graphite. The forward bias characteristics follow thermionic emission theory, and the extracted Schottky barrier heights closel...

Coherent spin states in semiconductor quantum dots offer promise as electrically controllable quantum bits (qubits) with scalable fabrication. For few-electron quantum dots made from gallium arsenide (GaAs), fluctuating nuclear spins in the host lattice are the dominant source of spin decoherence. We report a method of preparing the nuclear spin environment that suppresses the relevant componen...

Over the past two to three decades, gallium compounds have gained importance in the fields of medicine and electronics. In clinical medicine, radioactive gallium and stable gallium nitrate are used as diagnostic and therapeutic agents in cancer and disorders of calcium and bone metabolism. In addition, gallium compounds have displayed anti-inflammatory and immunosuppressive activity in animal m...