This paper reports on an initial assessment of the direct growth of In(Ga)As/GaAs quantum dots (QDs) solar cells on nanostructured surface Si substrate by molecular beam epitaxy (MBE). The effect of inserting 40 InAs/InGaAs/GaAs QDs layers in the intrinsic region of the heterojunction pin-GaAs/n⁺-Si was evaluated using photocurrent spectroscopy in comparison with pin-GaAs/n⁺-Si and pin-GaAs/GaA...

High resolution x-ray diffraction using synchrotron radiation was used to characterize GaAs grown by MBE at low temperatures (LT-GaAs). LT-GaAs grown at 225~ is nonstoichiometric and exhibits a 0.15% lattice expansion along the growth direction. Annealing LT-GaAs results in arsenic clusters with a well-defined orientation relationship with the GaAs matrix and a relaxation of the LT-GaAs lattice...

A fruitful approach to study the Fermi level position in GaInNAs/GaAs quantum wells QWs has been proposed in this paper. This approach utilizes contactless electroreflectance CER spectroscopy and a very simple design of semiconductor structures. The idea of this design is to insert a GaInNAs quantum well QW into a region of undoped GaAs layer grown on n-type GaAs substrate. The possible pinning...

MnAs films are grown on GaAs surfaces by molecular beam epitaxy. Specular and grazing incidence X-ray diffractions are used to study the influence of different strain states of MnAs/GaAs (110) and MnAs/GaAs (001) on the first-order magnetostructural phase transition. It comes out that the first-order magnetostructural phase transition temperature Tt, at which the remnant magnetization becomes z...

In this article we investigate the growth of GaAs on two different vicinal surfaces of Ge ~100!, cut 6° off the ~100! plane toward the ~110! plane or toward the ~111! plane. Both substrates exhibit evidence of a regular array of double steps. Ge substrates and GaAs films are characterized with low energy electron diffraction, low temperature photoluminescence, scanning tunneling microscopy, ele...

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192 LLE Review, Volume 95 An ion-implantation technique has been employed in the GaAs photodetector technology to obtain materials with a carrier lifetime in the picosecond and even subpicosecond regimes. Properties of proton,1 Ar+,2,3 As+,4–6 and other ion-implanted GaAs have been investigated thoroughly. Nitrogen-ion–implanted GaAs (N+-GaAs) is a relatively new member in the family of ion-imp...

Scanning thermal microscopy has been implemented in a cross-sectional geometry, and its application for quantitative, nanoscale analysis of thermal conductivity is demonstrated in studies of an ErAs/GaAs nanocomposite superlattice. Spurious measurement effects, attributable to local thermal transport through air, were observed near large step edges, but could be eliminated by thermocompression ...

Terahertz radiation was generated with several designs of photoconductive antennas (three dipoles, a bow tie, and a coplanar strip line) fabricated on low-temperature-grown (LT) GaAs and semi-insulating (SI) GaAs, and the emission properties of the photoconductive antennas were compared with each other. The radiation spectrum of each antenna was characterized with the photoconductive sampling t...