نتایج جستجو برای: field effect transistors
تعداد نتایج: 2338988 فیلتر نتایج به سال:
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in this paper, the morphology, roughness and nano structural properties of sio2/poly vinyl pyrrolidone synthesized with sol gel method, characterized by using scanning electron microscopy, atomic force microscopy and gps132a techniques.the main material taken from oxide silicon with weight percentage of 20, 40, 60, 80 and from poly vinyl pyrrolidone with percentages of 80, 60, 40, 20 is synth...
Articles you may be interested in Evaluation of pulsed laser annealing for flexible multilayer MoS2 transistors Appl. Schottky-barrier lowering in silicon nanowire field-effect transistors prepared by metal-assisted chemical etching Appl. Measurement of low Schottky barrier heights applied to metallic source/drain metal–oxide–semiconductor field effect transistors
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In this paper, the morphology, roughness and nano structural properties of SiO2/Poly Vinyl Pyrrolidone synthesized with sol gel method, characterized by using scanning electron microscopy, atomic force microscopy and GPS132A techniques.The main material taken from oxide silicon with weight percentage of 20, 40, 60, 80 and from poly vinyl pyrrolidone with percentages of 80, 60, 40, 20 is synth...
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Articles you may be interested in Graphene based field effect transistor for the detection of ammonia Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors Appl.
The piezoelectronic transistor (PET) has been proposed as a transduction device not subject to the voltage limits of field-effect transistors. The PET transduces voltage to stress, activating a facile insulator-metal transition, thereby achieving multigigahertz switching speeds, as predicted by modeling, at lower power than the comparable generation field effect transistor (FET). Here, the fabr...
A 20-band sp(3)d(5)s* spin-orbit-coupled, semiempirical, atomistic tight-binding model is used with a semiclassical, ballistic, field effect transistor (FET) model, to examine the ON-current variations to size variations of [110]-oriented PMOS nanowire devices. Infinitely long, uniform, rectangular nanowires of side dimensions from 3 to 12 nm are examined and significantly different behavior in...
In this review, recent advances in the development of electronic detection methodologies based on non-antibody recognition elements such as functional liposomes, aptamers and synthetic peptides are discussed. Particularly, we highlight the progress of field effect transistor (FET) sensing platforms where possible as the number of publications on FET-based platforms has increased rapidly. Biosen...
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