The piezoelectronic transistor (PET) has been proposed as a transduction device not subject to the voltage limits of field-effect transistors. The PET transduces voltage to stress, activating a facile insulator-metal transition, thereby achieving multigigahertz switching speeds, as predicted by modeling, at lower power than the comparable generation field effect transistor (FET). Here, the fabr...

A fluorine-terminated polycrystalline boron-doped diamond surface is successfully employed as a pH-insensitive SGFET (solution-gate field-effect transistor) for an all-solid-state pH sensor. The fluorinated polycrystalline boron-doped diamond (BDD) channel possesses a pH-insensitivity of less than 3mV/pH compared with a pH-sensitive oxygenated channel. With differential FET (field-effect transi...

An accurate and efficient modelling approach for field effect transistors (FET) as nonlinear active transmission lines is presented. The nonlinear active multiconductor transmission line (NAMTL) equations are obtained by considering the transistor as three active coupled lines operating in a nonlinear regime. This modelling procedure accurately spots the effect of wave propagation along the dev...

We report on studies of field-effect transistor (FET) and transparent thin-film transistor (TFT) devices based on lightly Ta-doped SnO2 nano-wires. The nanowire-based devices exhibit uniform characteristics with average field-effect mobilities exceeding 100 cm2/V x s. Prototype nano-wire-based TFT (NW-TFT) devices on glass substrates showed excellent optical transparency and transistor performa...

The advancement and challenges of field effect transistors are based on multi-gate from the perspective structure material. Multi-gate field-effect (Multi-gate FET) have steeper sub-threshold slopes, which can reduce short channel improve mobility drive current. A fin transistor (FinFET) gate-all-around (GAAFET) attractive structures most compatible with today’s standard machining technologies....

This paper introduces future devices for multi-valued logic implementation. Quantum dot gate field effect transistor (QDGFET) works based on the change in threshold voltage due to stored charge in the quantum dots in the gate region. Quantum dot channel field effect transistor (QDCFET) produces more number of states in their transfer characteristics because of charge flow through the mini-band ...

Since Flexible field effect transistor (F-FET) is the building block of any sophisticated electronic circuit, particularly in area wearable electronics and biomedical sensors, it has drawn a lot attention recently. It usually fabricated using stretchable semiconductors over polymeric substrates. This paper displays brief overview current fabrication techniques F-FET, specifically terms type sub...

Here, we demonstrate a rapid and simple method for doping a reduced graphene oxide (rGO) field effect transistor (FET) with nanocrystals to produce dual n-type behavior with light and bias voltage. This convenient method promises industrial level doping of graphene transistors.

A new pyrophosphate (PPi) chelator was designed for surface-sensitive electrical detection of biomolecular reactions. This article describes the synthesis of the PPi-selective receptor, its surface immobilization and application to label-free electrical detection on a silicon-based field-effect transistor (FET) sensor.