A combination of Auger electron spectroscopy and temperature-programed desorption was used to characterize the growth and interaction of Pd films with positively and negatively terminated ferroelectric LiNbO3(0001) surfaces. The growth mode of vapor-deposited Pd layers at 300 K was found to be dependent on the direction of the ferroelectric polarization with layer-by-layer growth occurring on t...

Ferroelectricity is a key issue in condensed matter physics. In ferroelectric materials, the application of an external electric field, E, can switch the spontaneous polarization through the inverting polarity of the noncentrosymmetric crystal structure. By making use of such property, ferroelectric materials can be applied in various electric applications such as memory, sensor, actuator, and ...

An approach to increase the capabilities of integrated circuit nonvolatile memory is to take advantage of the hysteresis in the polarization of ferroelectric materials. For a rigorous analysis of this and similar devices a suitable model for the ferroelectric effects has been developed. We describe this model and show the results of its implementation into a device simulator.

We show that there exists a novel long range interaction in ferroelectric Sm-C* materials due to thermally excited polarization waves. We propose that this interaction is the long range repulsion whose existence had been postulated earlier to explain the long period ferrielectric phase~ observed near the ferroelectric to antiferroelectric phase transition.

Nematic fluids with polar order could be most useful new molecular materials. However, such ferroelectric liquid crystals have not been observed as yet. This paper describes the first computer simulations of a ferroelectric nematic phase made from simple tapered particles as shown in the picture and gives some hints about the relevant molecular features.

Switching dynamics of ferroelectric materials are governed by the response of domain walls to applied electric field. In epitaxial ferroelectric films, thermally-activated 'creep' motion plays a significant role in domain wall dynamics, and accordingly, detailed understanding of the system's switching properties requires that this creep motion be taken into account. Despite this importance, few...

Title of Document: ORIENTATION DEPENDENCE OF THE PIEZOELECTRIC PROPERTIES OF EPITAXIAL FERROELECTRIC THIN FILMS Jun Ouyang, Doctor of Philosophy, 2005 Directed By: Professor Alexander. L. Roytburd Dept. of Materials Science and Engineering There are both intrinsic piezoelectric response and extrinsic piezoelectric response in ferroelectric materials. The intrinsic piezoelectric response is due ...

Ferroelectric perovskite oxides possess large electrocaloric effect, but only at high temperature, which limits their potential as next generation solid state cooling devices. Here, we demonstrate from phase field simulations that a giant adiabatic temperature change exhibits near room temperature in the strained ferroelectric PbTiO₃ nanotubes, which is several times in magnitude larger than th...