نتایج جستجو برای: etching rate

تعداد نتایج: 970589  

2012
Hidetaka Asoh Kosuke Fujihara Sachiko Ono

The morphological change of silicon macropore arrays formed by metal-assisted chemical etching using shape-controlled Au thin film arrays was investigated during anisotropic chemical etching in tetramethylammonium hydroxide (TMAH) aqueous solution. After the deposition of Au as the etching catalyst on (111) silicon through a honeycomb mask prepared by sphere lithography, the specimens were etch...

Journal: :Journal of the Surface Finishing Society of Japan 1995

Journal: :Journal of the Surface Finishing Society of Japan 1992

2004
C. J. Huang Y. K. Su S. L. Wu

In this study, the effect of solvents, HCl and aqua regia at room temperature, on the etching behavior of ITO film was investigated. A higher etching rate was obtained in aqua regia than in HCl. However, via XPS analysis, it was found that there was more surface residual byproduct in aqua regia etchant than in HCl. The surface concentration (ratio of chlorine to indium) was 7.2 and 0.38 in aqua...

Journal: :Journal of the Vacuum Society of Japan 2010

2013
Dong Wang Ran Ji Song Du Arne Albrecht Peter Schaaf

The fabrication of ordered arrays of nanoporous Si nanopillars with and without nanoporous base and ordered arrays of Si nanopillars with nanoporous shells are presented. The fabrication route is using a combination of substrate conformal imprint lithography and metal-assisted chemical etching. The metal-assisted chemical etching is performed in solutions with different [HF]/[H2O2 + HF] ratios....

2012
Chih-Chung Lai Yun-Ju Lee Ping-Hung Yeh Sheng-Wei Lee

The formation mechanism of SiGe nanorod (NR) arrays fabricated by combining nanosphere lithography and Au-assisted chemical etching has been investigated. By precisely controlling the etching rate and time, the lengths of SiGe NRs can be tuned from 300 nm to 1 μm. The morphologies of SiGe NRs were found to change dramatically by varying the etching temperatures. We propose a mechanism involvin...

2015
Prem Pal Kazuo Sato

Wet anisotropic etching based silicon micromachining is an important technique to fabricate freestanding (e.g. cantilever) and fixed (e.g. cavity) structures on different orientation silicon wafers for various applications in microelectromechanical systems (MEMS). {111} planes are the slowest etch rate plane in all kinds of anisotropic etchants and therefore, a prolonged etching always leads to...

2005
CIPRIAN ILIESCU KWONG LUCK TAN FRANCIS E.H. TAY JIANMIN MIAO

This paper is a review of wet and dry etching of one of the most common types of glass: Pyrex. The paper analyzes the methods for increasing the glass etch rate in HF solutions, namely, annealing, concentration, ultrasonic agitation and temperature. The limitations of the wet etching of glass are also presented. Mashing layers commonly used for deep wet etching of glass are analyzed, in terms o...

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