نتایج جستجو برای: etch

تعداد نتایج: 4042  

2011
Parnian Alizadeh Oskoee Elmira Jafari Navimipour Siavash Savadi Oskoee Mahmoud Bahari Fatemeh Pournaghiazar

The aim of this study was to compare the bond strength of translucent fiber posts to root dentin, cemented with 4 adhesion strategies. Forty eight (48) sound human central incisors were decoronated and divided into 4 groups: Etch-and-rinse group, two-step self-etch group, one-step self-etch group, and self-adhesive resin cement group. The adhesion between the post and root canal walls was asses...

2010
Ali Farahanchi Arthur C. Smith Ajay Somani Xiaolin Xie Hong Cai Nigel Drego Karthik Balakrishnan Daihyun Lim Daniel Truque Albert Chang Wei Fan Joy Johnson Zhipeng Li

A quantitative model capturing pattern dependent effects and time evolution of the etch rate in Deep Reactive Ion Etching (DRIE) is presented. DRIE is a key process for pattern formation in semiconductor fabrication. Non-uniformities are caused due to microloading and aspect ratio dependencies. The etch rate varies over time and lateral etch consumes some of the etching species. This thesis con...

2007
Johann Cervenka Hajdin Ceric Otmar Ertl Siegfried Selberherr

In MEMS fabrication micro-mechanical components have to be partially released from a substrate. Selectively etching away sacrificial layers, such that a free standing structure remains, is a widely used technique for this purpose. Free standing structures allow MEMS devices to induce or to sense mechanical movements or vibrations. During sacrificial etching lower etch rates than the blanket one...

2016
Navjot S. Mann Sameer Makkar Reetika Sharma

Introduction The aim of this study was to evaluate marginal sealing ability of newly introduced Dyad Flow flowable composite and compare to total-etch and self-etch adhesive system at the coronal and apical margins of class V resin composite restorations. Material and Methods A standard class V cavity (3 mm mesiodistal width, 3 mm occlusogingival height and 1.5 mm axial depth) was prepared on t...

1996
B. E. E. Kastenmeier P. J. Matsuo G. S. Oehrlein

The chemical dry etching of silicon nitride (Si3N4)and silicon nitride (SiO2) in a downstream plasma reactor using CF4, O2, and N2 has been investigated. A comparison of the Si3N4 and SiO2 etch rates with that of polycrystalline silicon shows that the etch rates of Si3N4 and SiO2 are not limited by the amount of fluorine arriving on the surface only. Adding N2 in small amounts to a CF4 /O2 micr...

2015
Ebaa I Al-Agha Mustafa I Alagha

BACKGROUND This study was carried out to evaluate the nanoleakage of two types of nanofilled adhesive systems in Class V composite resin restorations. MATERIALS AND METHODS Totally 60 human premolars were randomly assigned to two groups (n = 30). Standardized round Class V cavities (enamel and dentin margins) were prepared. A total-etch (N-Bond total etch) (Ivoclar Vivadent) and self-etching ...

Journal: :Dentistry journal 2023

Background: Restoring bonding composite to silver diamine fluoride (SDF)-treated enamel is challenging. This study investigates if phosphoric acid etch restores bond strength SDF-treated using universal adhesives. Methods: Twenty-four recently extracted permanent teeth were randomly divided into 4 (2 experimental (SDF) and 2 control (CTR)) groups: SDF+Water: SDF (1 min) then water rinse (15 mL)...

2001
Theodore Chung Seth R. Bank John Epple Kuang-Chien Hsieh

The dc current gain dependence of InGaP/GaAs heterojunction bipolar transistors (HBTs) on subcollector and etch-stop doping is examined. Samples of InGaP/GaAs HBTs having various combinations of subcollector doping and etch-stop doping are grown, and large area (60 m 60 ( ) HBTs are then fabricated for dc characterization. It is found that the dc current gain has a strong dependence on the dopi...

Journal: :Journal of nanoscience and nanotechnology 2014
Min Hwan Jeon Deok Hyun Yun Kyung Chae Yang Ji Youm Youn Du Yeong Lee Tae Hun Shim Jea Gun Park Geun Young Yeom

The magnetic tunnel junction (MTJ)-related materials such as CoFeB, CoPt, MgO, and Ru, and W were etched using CH3OH in a pulse-biased inductively coupled plasma system and the effect of bias pulsing (100% 30% duty percentage) on the etch characteristics of the MTJ-related materials was investigated at the substrate temperature of 200 degrees C. The etch selectivity of MTJ-related materials ove...

2008
Maria Suggs

Electrical through-wafer interconnects (ETWI) are often integrated with inertial sensors for harsh liquid environment applications. Devices with metal interconnects are very susceptible to corrosion in aquatic environments. An alternative approach is to form highly doped, conductive polysilicon through the wafer from the back side (unexposed to harsh environments) to the front side of the devic...

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