نتایج جستجو برای: epitaxial growth
تعداد نتایج: 824239 فیلتر نتایج به سال:
Thin films consisting of TiN nanocrystallites encapsulated in a fully percolated SiNy tissue phase are archetypes for hard and superhard nanocomposites. Here, we investigate metastable SiNy solid solubility in TiN and probe the effects of surface segregation during growth of TiSiN films onto substrates that are either flat TiN(001)/MgO(001) epitaxial buffer layers or TiN(001) facets of length 1...
Thin films of ZnS have been deposited by MOCVD on both BaTa206/ITO/glass and Si substrates. Diethylzinc (DEZn) and H2S are used for deposition on substrates heated to the 250-400°C temperature range. The microstructure and properties of ZnS films were studied by X-ray diffractometry (XRD), ultraviolet/visible spectrophotometry (UVS) and scanning electron microscopy (SEM). Films prepared on BaTa...
The characteristics of confined epitaxial growth are investigated with the goal of determining the contributing effects of mask attributes (spacing, feature size) and growth conditions (V/III ratio, pressure, temperature) on the efficiency of the approach for dislocation density reduction of GaN. In addition to standard (secondary electron and atomic force) microscopy, electron channeling contr...
We report an epitaxial growth technique for scalable production of hybrid sodium rare-earth fluoride (NaLnF4 ) microcrystals, including NaYF4 , NaYbF4 , and NaLuF4 material systems. The single crystalline nature of the as-synthesized products makes them strong upconversion emission. The freedom of combining a lanthanide activator (Er(3+) or Tm(3+) ) with a sensitizer (Yb(3+) ) at various doping...
OVERVIEW: The increasing sophistication of home electronics and telecommunication devices is propelling the demand for improved semiconductor devices. The SiGe (silicon germanium)-HBT (hetero-junction bipolar transistor) can realize high-speed operation, low noise, and low power consumption, therefore, its expected application to radio frequency IC communication devices is predicted to grow rap...
The chlorinated precursor methyltrichlorosilane (MTS), CH3SiCl3, has been used to grow epitaxial layers of 4H-SiC in a hot wall chemical vapour deposition (CVD) reactor with growth rates higher than 100 mm/h. The addition of chlorinated species to the gas mixture prevents silicon nucleation in the gas phase, thus allowing higher input flows of the precursors resulting in much higher growth rate...
Structurally uniform and chirality-pure single-wall carbon nanotubes are highly desired for both fundamental study and many of their technological applications, such as electronics, optoelectronics, and biomedical imaging. Considerable efforts have been invested in the synthesis of nanotubes with defined chiralities by tuning the growth recipes but the approach has only limited success. Recentl...
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