Pronounced improvements in the understanding of semiconductor device performance are expected if electrostatic potential distributions can be measured quantitatively and reliably under working conditions with sufficient sensitivity and spatial resolution. Here, we employ off-axis electron holography to characterize an electrically-biased Si p-n junction by measuring its electrostatic potential,...

Many external stimulations have been shown to promote bone regeneration. The effects of an alternating current (AC) electrostatic field, one of external stimulations, generated from a device with high voltage and low current output on human osteoblastic cell line have been investigated in this study. We investigated how human osteoblasts responded to an AC electrostatic field, and the output pa...

We demonstrate a silicon-based high-frequency nanomechanical device capable of switching controllably between two states at room temperature. The device uses a nanomechanical resonator with two distinct states in the hysteretic nonlinear regime. In contrast to prior work, we demonstrate room-temperature electrostatic actuation and sensing of the switching device with 100% fidelity by phase modu...

Epitaxial SiGe and SiC(P) layers are used in the Source and Drain regions of the CMOS device to increase hole or electron mobility by imposing compressive (for p-FET device) or tensile (for n-FET device) stress in the channel region of the device [1,2]. Mapping of electrostatic potential in such devices with electron holography faces two new issues. First, the mean inner potential (MIP) of the ...

A silicon micromachined deformable mirror QiDM) has been developed by Boston University and Boston Micromachines Corporation (BMC). The pDM employs a flexible silicon mirror supported by mechanical attachments to an array of electrostatic parallel plate actuators. The integrated system of mirror and actuators was fabricated by surface micromachining using polycrystalline silicon thin films. The...