نتایج جستجو برای: electron relaxation time

تعداد نتایج: 2206802  

1999
C. M. Wong J. D. McNeill C. B. Harris

Ultrafast relaxation dynamics of electrons at dielectric-metal interfaces reflect the nature of the electronic interaction with both the substrate and the adsorbed layer. The full understanding of macroscopic electrical transport properties across an interface requires the knowledge of the energies, spatial extent of the interfacial electronic states, and the electron scattering length. With th...

2009
Ryan M Young Graham B Griffin Oli T Ehrler Aster Kammrath Arthur E Bragg Jan R R Verlet Ori Cheshnovsky Daniel M Neumark

We have examined size-dependent electronic relaxation dynamics in isolated semiconducting mercury cluster anions using time-resolved photoelectron imaging. Relaxation following excitation from within the conduction (p-) band occurs on an ∼3–40 ps timescale and is attributed to non-adiabatic relaxation through the p-band. Exciting an electron from the valence (s-) band into the conduction band c...

Journal: :Physical review letters 2003
R Hanson B Witkamp L M K Vandersypen L H Willems van Beveren J M Elzerman L P Kouwenhoven

We have measured the relaxation time, T1, of the spin of a single electron confined in a semiconductor quantum dot (a proposed quantum bit). In a magnetic field, applied parallel to the two-dimensional electron gas in which the quantum dot is defined, Zeeman splitting of the orbital states is directly observed by measurements of electron transport through the dot. By applying short voltage puls...

2013
Michael Shur

A very large electron sheet density and a relatively long momentum relaxation time of the two-dimensional electron gas in III-N heterostructures makes this materials system to be very attractive for plasmonic electronics applications.

Journal: :International Journal of Modern Physics B 2019

Journal: :Physical review letters 2008
Georg M Müller Michael Römer Dieter Schuh Werner Wegscheider Jens Hübner Michael Oestreich

In this Letter, the first spin noise spectroscopy measurements in semiconductor systems of reduced effective dimensionality are reported. The nondemolition measurement technique gives access to the otherwise concealed intrinsic, low temperature electron spin relaxation time of n-doped GaAs (110) quantum wells and to the corresponding low temperature anisotropic spin relaxation. The Brownian mot...

Journal: :Physical review letters 2002
R I Dzhioev V L Korenev I A Merkulov B P Zakharchenya D Gammon Al L Efros D S Katzer

We report on the optical manipulation of the electron spin relaxation time in a GaAs-based heterostructure. Experimental and theoretical study shows that the average electron spin relaxes through hyperfine interaction with the lattice nuclei, and that the rate can be controlled by electron-electron interactions. This time has been changed from 300 ns down to 5 ns by variation of the laser frequ...

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