نتایج جستجو برای: electron configuration
تعداد نتایج: 430632 فیلتر نتایج به سال:
0026-2714/$ see front matter 2010 Elsevier Ltd. A doi:10.1016/j.microrel.2010.01.011 * Corresponding author. Address: Department of El Chiao Tung University, 1001 Ta-Hsueh Road, Hsinc 35712121x52974. E-mail address: [email protected] (Y. Li). In this work, a novel nanogap with inclined protrusion cathode in palladium strip fabricated by hydrogen absorption under high-pressure treatment i...
A theoretical description is presented for a single-electron transport through a vertical gated quantum dot. Using the configuration interaction method we study the correlation effects in the gated quantum dots. We have found that the electron-electron correlation only slightly changes the single-electron tunnelling conditions in the absence of an external magnetic field, but has a pronounced i...
We have investigated the electronic structure of Ru1-xCrxCaO3 using the full potential linearized augmented plane wave method within the local spin density approximation. We have obtained the spin magnetic moment centered at Ru sites from LSDA calculation. The Ru magnetic moment is consistent with the experimental estimates and is lower than the t32g↑t12g↓ electronic configuration. Cr decreas...
In this paper, the collisional filamentation instability of an electron beam-weakly magnetized and ionized plasma has been investigated in the presence of background plasma, using the fluid description. By describing the equilibrium configuration in the presence of binary collision terms between charged and neutral particles and using the local approximation method, the dispersion relation (DR)...
In this paper, we extract the mobility of ultra-thin, body buried oxide and fully depleted silicon-on-insulator MOSFET, for different front and back-gate configurations. The mobility values are found by using the Capacitance Gate Voltage and Current Gate Voltage characteristics. In addition, the maximum electron mobility is calculated for both configurations: SiON/Si (front-gate) and SiO2/Si (b...
The study of the interaction of electron irradiation with matter and the response of the material to the passage of electrons is a very challenging problem. However, the growth mechanism observed during nanostructural evolution appears to be a broad and promising scientific field in nanotechnology. We report the in situ TEM study of nanostructural evolution of electron-driven silver (Ag) nanocr...
We present hybrid PIC simulations of fast electron transport and energy deposition in pre-compressed fusion targets, taking full account of collective magnetic effects and the hydrodynamic response of the background plasma. Results on actual ignition of an imploded fast ignition configuration are shown accounting for the increased beam divergence found in recent experiments [J.S. Green et al., ...
zno nanocrystalline thin films were synthesized using cathodic reduction of zn foil in aqueous electrolyte containing zncl2 and h2o2, followed by annealing at 400 oc in the air. the x-ray diffraction pattern exhibited a set of well-defined diffraction peaks corresponding to the zno wurtzite phase. scanning electron microscope and transmission electron microscope images clearly revealed formati...
For superheavy elements with atomic numbers $120\leq Z \leq 170$, the concept of ground-state configuration is being reexamined. To this end, relativistic calculations electronic structure low-lying levels are carried out by means Dirac-Fock and configuration-interaction methods.The magnetic retardation parts Breit interaction as well QED effects taken into account. The influence relativistic, ...
This is the brief review of recent development and ongoing research of plasma optical systems based on the fundamental plasma optical idea magnetic electron isolation, equipotentialization magnetic field line and the axial-symmetric cylindrical electrostatic plasma lens (PL) configuration. The electrostatic PL is well-explored tool for focusing and manipulating large area, intense, positive lig...
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