Electrical breakdown is one of the most important physical phenomena in electrical and electronic engineering. Since the early 20(th) century, many theories and models of electrical breakdown have been proposed, but the origin of one key issue, that the explanation for dc breakdown strength being twice or higher than ac breakdown strength in insulating materials, remains unclear. Here, by emplo...

In quantum gases with contact repulsion, the distribution of momenta atoms typically decays as $\ensuremath{\sim}1/|p{|}^{4}$ at large momentum $p$. Tan's relation connects amplitude that $1/|p{|}^{4}$ tail to adiabatic derivative energy respect coupling constant or scattering length gas. Here it is shown breaks down in one-dimensional Bose gas for a peculiar class stationary states. These stat...

Here we study the stability and rupture of molecular junctions under high voltage bias at the single molecule/single bond level using the scanning tunneling microscope-based break-junction technique. We synthesize carbon-, silicon-, and germanium-based molecular wires terminated by aurophilic linker groups and study how the molecular backbone and linker group affect the probability of voltage-i...

Dielectric material between capacitor electrodes increases the capacitance. However, when the electric field exceeds a threshold, electric breakdown in the dielectric discharges the capacitor suddenly and the stored energy is lost. We show that nano vacuum tubes do not have this problem because (i) electric breakdown can be suppressed with quantization phenomena, and (ii) the capacitance is lar...

In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and ...