Conventional CMOS technology's performance deteriorates due to increased short channel effects. Double-gate (DG) FinFETs has better short channel effects performance compared to the conventional CMOS and stimulates technology scaling. The main drawback of using CMOS transistors are high power consumption and high leakage current. Fin-type field-effect transistors (FinFETs) are promising substit...

ABSTRACT In this paper we propose Double gate transistors (FinFETs) are the substitutes for bulk CMOS evolving from a single gate devices into three dimensional devices with multiple gates (double gate, triple gate or quadruple-gate devices). The main drawback of using CMOS transistors are high power consumption and high leakage current. Enormous progress has been made to scale transistors to e...

A triple metal double gate (TM-DG) MOSFET with high-k dielectrics has been proposed to overcome the short channel effects. We are using top and bottom metal gates with different work functions to screen the effect of drain (DIBL effect). It has been found that this is effective in reducing the short channel effects. The metal gates have been used to remove the poly silicon depletion of conventi...

An analytical model of the threshold voltage variance induced by random dopant fluctuations (RDF) in junctionless (JL) FETs is derived for both cylindrical nanowire (NW) and planar double-gate (DG) structures considering only the device electrostatics in subthreshold. The model results are shown to be in reasonable agreement with TCAD simulations for different gate lengths and device parameters...

In this work, high-performance low-temperature poly-silicon (LTPS) thin film transistors (TFTs) with double-gate (DG) structure and lateral grain growth have been demonstrated by excimer laser crystallization (ELC). Therefore, the DG TFTs with lateral silicon grains in the channel regions exhibited better current–voltage characteristics as compared with the conventional solid-phase crystallized...

We have investigated the gate-dependent magnetoresistance of strongly asymmetric double-well structures. The structures were prepared by inserting a thin Al0.3Ga0.7As barrier into the GaAs buffer layer of standard modulation-doped GaAs/Al0.3Ga0.7As heterojunctions. The resulting double-well system consists of a nearly rectangular well and of a triangular well coupled by tunneling through the th...

By transporting one DNA double helix (T-segment) through a double-strand break in another (G-segment), topoisomerase II reduces fractions of DNA catenanes, knots and supercoils to below equilibrium values. How DNA segments are selected to simplify the equilibrium DNA topology is enigmatic, and the biological relevance of this activity is unclear. Here we examined the transit of the T-segment ac...

We present measurements of single-qubit gate errors for a superconducting qubit. Results from quantum process tomography and randomized benchmarking are compared with gate errors obtained from a double pi pulse experiment. Randomized benchmarking reveals a minimum average gate error of 1.1+/-0.3% and a simple exponential dependence of fidelity on the number of gates. It shows that the limits on...

The end of the roadmap for planar single-gate (SG) CMOS seems to be drawing nearer as the industry increases research activities in double-gate (DG) and multi-gate (MG) CMOS novel device structures. Therefore, this paper will focus on how to extend the life of planar SG CMOS through 2016 and accelerate the understanding & realization of MG CMOS by 2007 through the use of advanced ion implantati...