Doping semiconductors is an important step for their technological application. While doping bulk semiconductors can be easily achieved, incorporating dopants in semiconductor nanostructures has proven difficult. Here, we report a facile synthesis method for doping titanium-dioxide (TiO₂) nanotubes that was enabled by a new electrochemical cell design. A variety of optical, electronic and magne...

With the development of single-atom transistors, consisting of single dopants, nanofabrication has reached an extreme level of miniaturization. Promising functionalities for future nanoelectronic devices are based on the possibility of coupling several of these dopants to each other. This already allowed to perform spectroscopy of the donor state by d.c. electrical transport. The next step, nam...

The production of modern microchips requires a large number of fabrication steps. One important step is the creation of semiconducting areas, where charged dopants are implanted into a semiconducting material and under the in uence of high temperatures the dopants penetrate into the layer. This redistribution of dopants and point defects can be described in terms of pair di usion mechanisms. Th...

Doping via self-assembled macromolecules might offer a solution for developing single atom electronics by precisely placing individual dopants at arbitrary location to meet the requirement for circuit design. Here we synthesize dendrimer-like polyglycerol macromolecules with each carrying one phosphorus atom in the core. The macromolecules are immobilized by the coupling reagent onto silicon su...

The research work examined the effect of the removal of iron from aluminium-silicon alloys using dopants on the structure and mechanical properties. Manganese, cobalt and molybdenum were used as the modifying elements. The as-cast Al Si alloys were analyzed for iron content using Atomic Absorption Spectrometer (AAS) technique. The dopants or modifying elements were added as micro additives at v...

Local atomic structures of Zr and dopant cations in zirconia solid solutions with Fe,03, Ga203, Y203, and Gd203 .have been determined. The Zr ions in both partially stabilized tetragonal and fully stabilized cubic zirconia have their own characteristic structures which are dopant-independent. The dopant cations substitute for Zr ions despite severe local distortions necessitated by the large di...

Resonant levels are promising for high-performance single-phase thermoelectric materials. Recently, phase-change materials have attracted much attention for energy conversion applications. As the energetic position of resonant levels could be temperature dependent, searching for dopants in phase-change materials, which can introduce resonant levels in both low and high temperature phases, remai...

A molecular-mechanics computational study is performed in order to analyze the arrangement of (1R,2S)-(-)-ephedrine molecules within the 12-MR channels of the AFI aluminophosphate microporous framework and the influence on the spatial distribution of dopants embedded in the tetrahedral network. Results showed that ephedrine molecules arrange exclusively as dimers by π-π stacking of the aromatic...

We demonstrate reversible RGB-color photocontrol of a chiral nematic liquid crystal (N*LC) by using newly synthesized closed- and open-type chiral dopants. The photoswitching elements in the dopants are azobenzene units on axially chiral binaphthyl cores. Owing to cis-trans photoisomerization of the azobenzene units, both closed- and open-type compounds showed higher solubility, larger helical ...

An analytical model is proposed for the random dopant fluctuation (RDF) in a symmetric double-gate metal-oxidesemiconductor field-effect-transistor (DG MOSFET) in the subthreshold region. Unintended impurity dopants cannot be absolutely prevented during the device fabrication; hence, it is important to analytically model the fluctuations in the electrical characteristics caused by these impurit...