insulating substrates such as SiO2 are highly disordered, exhibiting characteristics that are far inferior to the expected intrinsic properties of graphene. We have developed a novel technique for substrate engineering of graphene devices using layered dielectric materials to build graphene based vertical heterostructures. We employ hBN, an insulating isomorph of graphite, as a substrate and ga...

Hydrogen adatoms and other species covalently bound to graphene act as resonant scattering centers affecting the electronic transport properties and inducing Anderson localization. We show that attractive interactions between adatoms on graphene and their diffusion mobility strongly modify the spatial distribution, thus fully eliminating isolated adatoms and increasing the population of larger ...

Supercapacitors with porous electrodes of graphene macroscopic assembly are supposed to have high energy storage capacity. However, a great number of "close pores" in porous graphene electrodes are invalid because electrolyte ions cannot infiltrate. A quick method to prepare porous graphene electrodes with reduced "close pores" is essential for higher energy storage. Here we propose a wet-spinn...

The structural evolution of graphene on Ni(111) is investigated as a function of growth temperature by scanning tunneling microscopy (STM). Low temperature (400−500 °C) growth results in a continuous but highly defective film with small ordered graphene domains and disordered domains composed of Stone−Wales (SW)-like defects. As the growth temperature is increased, the disordered domains shrink...

We report measurements of current noise in single-layer and multilayer graphene devices. In four single-layer devices, including a p-n junction, the Fano factor remains constant to within +/-10% upon varying carrier type and density, and averages between 0.35 and 0.38. The Fano factor in a multilayer device is found to decrease from a maximal value of 0.33 at the charge-neutrality point to 0.25...

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All large-scale graphene films contain extended topological defects dividing graphene into domains or grains. Here, we spatially map electronic transport near specific domain and grain boundaries in both epitaxial graphene grown on SiC and CVD graphene on Cu subsequently transferred to a SiO2 substrate, with one-to-one correspondence to boundary structures. Boundaries coinciding with the substr...

We report an intriguing transition from the quantum spin Hall phase to the spin Hall effect upon segregation of thallium adatoms adsorbed onto a graphene surface. Landauer-Büttiker and Kubo-Greenwood simulations are used to access both edge and bulk transport physics in disordered thallium-functionalized graphene systems of realistic sizes. Our findings not only quantify the detrimental effects...