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We have grown and compared microstructures and dielectric properties of PNZST thin films prepared on two different substrates by sol /gel methods. To ensure a complete single-phase perovskite PNZST thin film, a capping layer of PbO must be added to the top surface of the thin film before final heat treatment. Microstructure characterization was examined with X-ray diffraction, scanning and tran...

Tetracene thin film transistors with rare earth oxide (Nd2O3) as gate dielectric is reported in this work. Rare earth oxide with high dielectric constant and low leakage current improve the performance of the organic thin film transistors (OTFTs). The fabricated tetracene OTFTs have shown good output characteristics with mobility 0.93x10 cm/V.s, ON-OFF ratio 3.3x10, sub-threshold swing 0.06 V/d...

We introduce an effect of metallization of dielectric nanofilms by strong, adiabatically varying electric fields. The metallization causes optical properties of a dielectric film to become similar to those of a plasmonic metal (strong absorption and negative permittivity at low optical frequencies). This is a quantum effect, which is exponentially size-dependent, occurring at fields on the orde...

We present theoretical calculations of the Casimir force for Au thin films near the insulator-conductor transition that has been observed experimentally. The dielectric function of the Au thin films is described by the Drude-Smith model. The parameters needed to model the dielectric function such as the relaxation time, plasma frequency and the backscattering constant depend on the thickness of...

We apply the classical over-the-barrier (COB) model to charge transfer between highly charged ions (HCIs) and targets consisting of thin dielectric films on metals. Distances for the onset of classically allowed above-surface electron capture are obtained as a function of HCI charge state, film thickness, film permittivity, and film-metal electron binding energies. The model describes the cross...

The organic material soluble polyimide (PI) and organic-inorganic hybrid PI-barium titanate (BaTiO3) nanoparticle dielectric materials (IBX, where X is the concentration of BaTiO3 nanoparticles in a PI matrix) were successfully synthesized through a sol-gel process. The effects of various BaTiO3 contents on the hybrid film performance and performance optimization were investigated. Furthermore,...

We report here on pentacene based organic field effect transistors (OFETs) with a high-k HfO2 gate oxide. HfO2 layers were prepared by two different methods: anodic oxidation and sol–gel. A comparison of the two processes on the electrical properties of OFETs is given. Ultra thin nanoporous (20 nm) sol–gel deposited oxide films were obtained following an annealing at 450 C. They lead to high mo...

Monte Carlo simulations of pattern-dependent charging during interlevel dielectric ~ILD! deposition in high-density plasmas reveal that the initial conformality of the ILD film plays a crucial role in metal line charging up and the subsequent degradation to the buried gate oxide to which the metal line is connected. Line charging occurs when the top dielectric is thick enough to prevent tunneli...

Goniometric time-domain spectroscopy (GTDS), employing an ultrashort electromagnetic (EM) pulse technique, has been developed for measuring the dielectric constant of thin films in a broad band of gigahertz to terahertz. An ultrafast optoelectronic system, including an emitter and a detector unit, is constructed with a –2 goniometer. A silicon wafer was analyzed as the reference substrate mater...