نتایج جستجو برای: dc sputtering
تعداد نتایج: 62862 فیلتر نتایج به سال:
The origin of plasma-induced damage on a p -type wide-bandgap layer during the sputtering of tin-doped indium oxide (ITO) contact layers by using radiofrequency-superimposed direct current (DC) sputtering and its effects on the forward voltage and light output power (LOP) of light-emitting diodes (LEDs) with sputtered ITO transparent conductive electrodes (TCE) is systematically studied. Changi...
Thermochromic VO2 thin films have successfully been grown on SiO2-coated float glass by reactive DC and pulsed-DC magnetron sputtering. The influence of substitutional doping of V by higher valence cations, such as W, Mo, and Nb, and respective contents on the crystal structure of VO2 is evaluated. Moreover, the effectiveness of each dopant element on the reduction of the intrinsic transition t...
The response of the local RF current measured at limiters of 3-strap ICRF antenna to variations of power balance and phasing at fICRF=30MHz agrees qualitatively well with EM calculations by TOPICA and RAPLICASOL codes. Measurements of tungsten sputtering yield and DC current at the limiters correlate strongly with the local RF current. In contrast to findings for the 2-strap antennas, values of...
Sputtering is an important physical vapor deposition (PVD) method in the manufacture of many products. However, sputtering processes are prone to arcing, which can cause damage to the work piece. Therefore, arcs must be detected and extinguished in a timely manner to minimize damage. Instantaneous arc rate and total arcs per process step are useful data for assessing PVD chamber health, and det...
AlNxOy thin films were produced by DC reactive magnetron sputtering, using an atmosphere of argon and a reactive gas mixture of nitrogen and oxygen, for a wide range of partial pressures of reactive gas. During the deposition, the discharge current was kept constant and the discharge parameters were monitored. The deposition rate, chemical composition, morphology, structure and electrical resis...
We have deposited weakly textured substoichiometric NbB2-x thin films by magnetron sputtering from a NbB2 target. The films exhibit superhardness (42 ± 4 GPa), previously only observed in overstoichiometric TiB2 thin films, and explained by a self-organized nanostructuring, where thin TiB2 columnar grains hinder nucleation and slip of dislocations and a B-rich tissue phase between the grains pr...
Key features of this waveform are the voltage boost period following each polarity transition and fast current rise time due to that boost. Ideally, the boost voltage would be adjustable. It is expected that adjusting the boost voltage will enable some tuning of the film properties, since it will effectively allow tuning of ion energy within the process. Additionally, adjustable duty, the ratio...
Sustaining a plasma in a magnetron discharge requires energization of the plasma electrons. In this work, Ohmic heating of electrons outside the cathode sheath is demonstrated to be typically of the same order as sheath energization, and a simple physical explanation is given. We propose a generalized Thornton equation that includes both sheath energization and Ohmic heating of electrons. The s...
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