Recent studies have reported an interesting class of semiconductor materials that bridge the gap between semiconductors and half-metallic ferromagnets. These materials, called spin gapless semiconductors, exhibit a band gap in one of the spin channels and a zero band gap in the other and thus allow for tunable spin transport. Here, we report the first experimental verification of the spin gaple...

A semiclassical treatment of spin relaxation in direct-gap compound semiconductors due to scattering by edge dislocations from both charged cores, and the strain fields surrounding them is presented. The results indicate a deleterious effect on spin transport in narrow bandgap III-V semiconductors due to dislocation scattering. However, this form of scattering is found to be surprisingly benign...

Compound Semiconductors are everywhere, behind many of the devices and services that we take for granted in this technology age. No longer are they only exotic devices for complex military systems. Today, they are the unsung heroes of the wireless revolution; handling the complex RF interfaces between lowerfrequency silicon operating systems. In high-volume applications, such as cellular phones...

Recent high pressure x-ray experiments show that, contrary to traditional expectations, the NaCl structure is not present in covalent semiconductors, and the diatomic b-Sn structure is absent in all compound semiconductors. We explain these systematic absences in terms of dynamical phonon instabilities of the NaCl and b-Sn crystal structures. Covalent materials in the NaCl structure become dyna...

Part 2 reviews the materials properties of photonic materials, such as structure (chemical bonds) and electrical conductivity (bands) in Group IV and III-V compound/alloy semiconductors. The correlation of the principal quantum number with optical, thermal and mechanical properties is examined. The definition of effective mass qualifies the energy-wavenumber dispersion relation for direct or in...