While designing supporting and peripheral circuits like address decoders, sensing circuits, sensing amplifiers, pre charge and I/O control circuits are very important for the proper functioning of SRAM. BL and BL are the two access lines present in the SRAM memory cell which is accessed by the supporting circuits. Designing memory cell with low power consumption and high noise margin without co...

Carbon nanotube field-effect transistor (CNTFET) refers to a field-effect transistor that utilizes a single carbon nanotube or an array of carbon nanotubes as the channel material instead of bulk silicon in the traditional MOSFET structure. Since it was first demonstrated in 1998, there have been tremendous developments in CNTFETs, which promise for an alternative material to replace silicon in...

Electrochemical biosensors are widely investigated as they represent attractive analytical tools for detection of a broad range bio-molecules, thanks to their simplicity, high sensitivity and short response time. Especially, employing an electrolyte-gated field-effect transistors (EG-FETs) electrochemical transduction element have gained increasing interest, due the signal amplification intrins...

Ternary logic system is the most promising and pursued alternative to prevailing binary systems due energy efficiency of circuits following reduced circuit complexity chip area. In this paper, we have proposed a ternary 3-Transistor Dynamic Random-Access Memory (3 T-DRAM) cell using single word-line for both read write operations. For simulation circuit, used Carbon-Nano-Tube Field Effect Trans...

Differential Analog Viterbi Decoding (DAVD) for Forward-Error-Correction (FEC) is used in channel coding for digital communications. The use of analog circuits to reduce the size and power consumption of channel decoders such as Viterbi decoders has been an active area of research over the recent years. In this paper, differential analog Viterbi decoder architecture is proposed and implemented ...

For the first time, a deep study of gate control coefficient (αG) effect on CNTFET performance has done in this research. A new, analytical CNTFET simulation along with multiple parameter approach has executed with 3D output in MATLAB and that used it to examine device performance. It is found that, drain current and transconductance increases with high gate control coefficient. On the other ha...

Complementary metal oxide semiconductor technology (CMOS) has been faced critical challenges in nanoscale regime. CNTFET (Carbon Nanotube Field effect transistor) technology is a promising alternative for CMOS technology. In this paper, we proposed a novel 7-input minority gate in CNTFET technology that has only 9 CNTFETs. Minority function is utilized in the voting systems for decision making ...

In many applications counter is used to divide input clock to produce output, the frequency of the output is the divide by N times of the input clock frequency. Due to these reasons ripple counters can be used as frequency dividers to reduce a high clock frequency down to a more usable value for use in digital clocks and timing applications. In many applications such as ultra low power digital ...

in this paper, we propose and evaluate a novel design of a lightly doped drain and source carbon nanotube field effect transistor (ldds-cntfet) with a negative differential resistance (ndr) characteristic, called negative differential resistance ldds-cntfet (ndr-ldds-cntfet). the device was simulated by using a non equilibrium green’s function method. to achieve this phenomenon, we have created...